Open Access. Powered by Scholars. Published by Universities.®
![Digital Commons Network](http://assets.bepress.com/20200205/img/dcn/DCsunburst.png)
Semiconductor and Optical Materials Commons™
Open Access. Powered by Scholars. Published by Universities.®
- Discipline
- Institution
Articles 1 - 3 of 3
Full-Text Articles in Semiconductor and Optical Materials
Application Of Silicon Nanohair Textured P-N Junctions In A Photovoltaic Device, Michael Small
Application Of Silicon Nanohair Textured P-N Junctions In A Photovoltaic Device, Michael Small
Electronic Theses and Dissertations
The goal of this project is to design and develop a fabrication process for a silicon photovoltaic device which incorporates a nanohair textured p-n junction. The silicon nanowires are etched into a silicon wafer, comprising an epitaxial p-layer on n-substrate, via metal-assisted chemical etching (MACE). The resulting nanowires contain p-n junctions that lie along the length of the vertical nanowires. This construct has the potential to increase the optical bandwidth of a silicon photovoltaic device by allowing a greater amount of short wavelength light to reach the junction. In addition, the MACE method of nanofabrication has the potential for decreasing …
Solar Cell Potential Induced Degradation Sensor, Luc Alexandre Tousignant
Solar Cell Potential Induced Degradation Sensor, Luc Alexandre Tousignant
Materials Engineering
It is important to maintain Photovoltaic (PV) cells and protect them from damage mechanisms like Potential Induced Degradation (PID), which can contribute to shorter lifespans and lower efficiencies. Current leakage through cell encapsulation can cause charge migration in PV cells that reduces the maximum quantum efficiency, which is the cause of PID. An experiment was setup to determine the feasibility of a non-silicon sensor able to produce similar leakage behavior to traditional PV cells under recorded humidity conditions. Thin sheet metals were encapsulated in EVA, a common PV encapsulant polymer, and mounted in aluminum framing. Three sensors, along with a …
Design, Fabrication, And Characterization Of Novel Optoelectronic Devices For Near-Infrared Detection, Ahmad Nusir
Design, Fabrication, And Characterization Of Novel Optoelectronic Devices For Near-Infrared Detection, Ahmad Nusir
Graduate Theses and Dissertations
Investigating semiconductor materials and devices at the nanoscale has become crucial in order to maintain the exponential development in today’s technology. There is a critical need for making devices lower in power consumption and smaller in size. Nanoscale semiconductor materials provide a powerful platform for optoelectronic device engineers. They own interesting properties which include enhanced photoconductivity and size-tunable interband transitions.
In this research, different types of nanostructures were investigated for optoelectronic devices: nanocrystals, nanowires, and thin-films. First, lead selenide nanocrystals with narrow bandgap were synthesized, size-tailored, and functionalized with molecular ligands for the application of uncooled near-infrared photodetectors. The devices …