Open Access. Powered by Scholars. Published by Universities.®
Semiconductor and Optical Materials Commons™
Open Access. Powered by Scholars. Published by Universities.®
- Discipline
- Institution
Articles 1 - 3 of 3
Full-Text Articles in Semiconductor and Optical Materials
Application Of Silicon Nanohair Textured P-N Junctions In A Photovoltaic Device, Michael Small
Application Of Silicon Nanohair Textured P-N Junctions In A Photovoltaic Device, Michael Small
Electronic Theses and Dissertations
The goal of this project is to design and develop a fabrication process for a silicon photovoltaic device which incorporates a nanohair textured p-n junction. The silicon nanowires are etched into a silicon wafer, comprising an epitaxial p-layer on n-substrate, via metal-assisted chemical etching (MACE). The resulting nanowires contain p-n junctions that lie along the length of the vertical nanowires. This construct has the potential to increase the optical bandwidth of a silicon photovoltaic device by allowing a greater amount of short wavelength light to reach the junction. In addition, the MACE method of nanofabrication has the potential for decreasing …
The Physical Behavior And Characterization Of Nanoporous Silicon And Dispenser Cathode Surfaces, Tyler Lucius Corey Maxwell
The Physical Behavior And Characterization Of Nanoporous Silicon And Dispenser Cathode Surfaces, Tyler Lucius Corey Maxwell
Theses and Dissertations--Chemical and Materials Engineering
Nanostructured materials have received a surge of interest in recent years since it has become apparent that reducing the size of a material often leads to heightened mechanical behavior. From a fundamental standpoint, this stems from the confinement of dislocations. Applications in microelectromechanical devices, lithium ion batteries, gas sensing and catalysis are realized by combining the improvements in mechanical behavior from material size reduction with the heightened chemical activity offered by materials with a high surface-area-to-volume ratio. In this study, films of nanoporous Si-Mg were produced through magnetron sputtering, followed by dealloying using an environmentally benign process with distilled water. …
Photoluminescence From Gan Co-Doped With C And Si, Mykhailo Vorobiov
Photoluminescence From Gan Co-Doped With C And Si, Mykhailo Vorobiov
Theses and Dissertations
This thesis devoted to the experimental studies of yellow and blue luminescence (YL and BL relatively) bands in Gallium Nitride samples doped with C and Si. The band BLC was at first observed in the steady-state photoluminescence spectrum under high excitation intensities and discerned from BL1 and BL2 bands appearing in the same region of the spectrum. Using the time-resolved photoluminescence spectrum, we were able to determine the shape of the BLC and its position at 2.87 eV. Internal quantum efficiency of the YL band was estimated to be 90\%. The hole capture coefficient of the BLC …