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Full-Text Articles in Semiconductor and Optical Materials
Design, Fabrication, And Characterization Of All-Inorganic Quantum Dot Light Emitting Diodes, Ramesh Vasan
Design, Fabrication, And Characterization Of All-Inorganic Quantum Dot Light Emitting Diodes, Ramesh Vasan
Graduate Theses and Dissertations
Quantum dot light emitting diodes are investigated as a replacement to the existing organic light emitting diodes that are commonly used for thin film lighting and display applications. In this, all-inorganic quantum dot light emitting diodes with inorganic quantum dot emissive layer and inorganic charge transport layers are designed, fabricated, and characterized. Inorganic materials are more environmentally stable and can handle higher current densities than organic materials. The device consists of CdSe/ZnS alloyed core/shell quantum dots as the emissive layer and metal oxide charge transport layer. The charge transport in these devices is found to occur through resonant energy transfer …
Near Bandgap Two-Photon Excited Luminescence Of Inas Quantum Dots, Xian Hu
Near Bandgap Two-Photon Excited Luminescence Of Inas Quantum Dots, Xian Hu
Graduate Theses and Dissertations
Semiconductor quantum dots (QDs) confine carriers in three dimensions, resulting in atomic-like energy levels as well as size-dependent electrical and optical properties. Self-assembled III-V QD is one of the most studied semiconductor QDs thanks to their well-established fabrication techniques and versatile optical properties. This dissertation presents the photoluminescence (PL) study of the InAs/GaAs QDs with both above bandgap continuous-wave excitation (one-photon excitation) and below-bandgap pulse excitation (two-photon excitation). Samples of ensemble QDs, single QD (SQD), and QDs in a micro-cavity, all grown by molecular beam epitaxy, are used in this study. Morphology of these samples was examined using atomic force …