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Full-Text Articles in Semiconductor and Optical Materials
Enhanced Coupling Strength Gratings For Outcouplers In Optical Waveguides, Ruo-Hua He
Enhanced Coupling Strength Gratings For Outcouplers In Optical Waveguides, Ruo-Hua He
Electrical Engineering Theses and Dissertations
Gratings used for silicon photonic waveguides were demonstrated with outcoupling efficiency greater than 60% in a short grating length of 13 µm at a wavelength of 1550 nm. Due to problems of generating light from silicon, light has to be generated by either growing III-V material, wafer bonding III-V material to silicon, or externally generated light has to be coupled into and out of silicon photonic waveguides. Gratings have been used in semiconductor lasers to obtain single frequency operation. Some applications such as telecommunications require a narrow and single spectral line. And such single frequency lasers are typically distributed Bragg …
A Comparative Analysis Of Integrated Optical Waveguide Isolators With Magneto-Optic Layers, Reyhane Oztekin
A Comparative Analysis Of Integrated Optical Waveguide Isolators With Magneto-Optic Layers, Reyhane Oztekin
Electrical Engineering Theses and Dissertations
The objective of this study is to theoretically devise an on-chip optical isolator which is monolithically integrated with a semiconductor waveguide layer yielding low loss. The optical properties of iron are modeled for the use of optical waveguide isolators by improving the Brendel-Bormann model. Our model for iron shows excellent fit with the optical data up to 30 electronvolts (eV). The semiconductor optical waveguide isolator with magneto-optic layers based on non-reciprocal loss shift is developed in this study. Fe, Co, and Ni metals as well as cerium-substituted yttrium iron garnet (Ce:YIG) have been used as magneto-optic layers. We have shown …
Investigation Of The Effects Of Harmful Radiation On Type-Ii Strained Layer Superlattice Focal Plane Arrays Operated In The Long Wave Infrared, Patrick Fumo
Electrical Engineering Theses and Dissertations
In-situ exposure of InAs/InAsSb strained layer superlattice focal plane arrays to gamma-rays revealed the possibility of a detector capable of imaging through a total ionizing dose event. Two long wave infrared focal plane arrays were exposed to a Co60 source at dose rates of 60 Rads/s and 70 Rads/s in incremental steps up to a total accumulated dose of 30 kRads. The first device showed no degradation in dark current density with accumulated dose while the second device tested showed a small increase up to 1 kRad and minimal increases with subsequent dose steps. The primary imaging defect in …