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Molybdenum Sulfide Prepared By Atomic Layer Deposition: Synthesis And Characterization, Steven Payonk Letourneau
Molybdenum Sulfide Prepared By Atomic Layer Deposition: Synthesis And Characterization, Steven Payonk Letourneau
Boise State University Theses and Dissertations
Molybdenum disulfide (MoS2) is the prototypical two-dimensional (2D) semiconductor. Like graphite, it has a layered structure containing weak van der Waals bonding between layers, while exhibiting strong covalent bonding within layers. The weak secondary bonding allows for isolation of these 2D materials to single layers, like graphene. While bulk MoS2 is an indirect band gap semiconductor with a band gap of ~1.3 eV, monolayer MoS2 exhibits a direct band gap of ~1.8 eV, which is an attractive property for many opto-electronic applications. Atomic layer deposition (ALD) has been used to grow amorphous films of MoS2 …