Open Access. Powered by Scholars. Published by Universities.®
Semiconductor and Optical Materials Commons™
Open Access. Powered by Scholars. Published by Universities.®
Articles 1 - 2 of 2
Full-Text Articles in Semiconductor and Optical Materials
Photoluminescence Of Photoelectrochemically Etched N+-Si, Guozheng Li, Chengqian Zhang, Xiumei Yang
Photoluminescence Of Photoelectrochemically Etched N+-Si, Guozheng Li, Chengqian Zhang, Xiumei Yang
Journal of Electrochemistry
PS layer on n+Si with (111) orientation prepered by means of photoelectrochemically etched has photoluminescent (PL) ability like PS layer on usual nSi. The data of PL spectra and quenching are given.
Electroluminescence Of Photoelectrochemically Etched N + Si, Guozheng Li, Chengqian Zhang, Xiumei Yang
Electroluminescence Of Photoelectrochemically Etched N + Si, Guozheng Li, Chengqian Zhang, Xiumei Yang
Journal of Electrochemistry
Porous silicon with micrometer size pores, which is made on n + Si by photoelectrochemically etched, has electroluminescent property. Each monochromic intensity and wavelength range of luminescent spectra depend on polarized potential. The intersity and the stability of cathodic electroluminescence is high than those of anodic one. Voltammetric behavior before quenching indicated that the electrochemical reactions of some surface species are involved in except the reduction of S 2O 2- 8, which leads to radiative recombination. The energy band diagram based on n + Si (E g=1.1 eV)/PS(E g=1.8 eV) junction is proposed.