Semiconductor and Optical Materials Commons^™

Study Of Single-Photon Wave-Packets With Atomically Thin Nonlinear Mirrors, Christopher Klenke

Graduate Theses and Dissertations

A novel controlled phase gate for photonic quantum computing is proposed by exploiting the powerful nonlinear optical responses of atomically thin transition metal dichalcogenides (TMDs) and it is shown that such a gate could elicit a π-rad phase shift in the outgoing electric field only in the case of two incident photons and no other cases. Firstly, the motivation for such a gate is developed and then the implementation of monolayer TMDs is presented as a solution to previous realization challenges. The single-mode case of incident photons upon a TMD is derived and is then used to constrain the more …

Fabrication And Characterization Of Photodetector Devices Based On Nanostructured Materials: Graphene And Colloidal Nanocrystals, Wafaa Gebril

Graduate Theses and Dissertations

Photodetectors are devices that capture light signals and convert them into electrical signals. High performance photodetectors are in demand in a variety of applications, such as optical communication, security, and environmental monitoring. Among many appealing nanomaterials for novel photodetection devices, graphene and semiconductor colloidal nanocrystals are promising candidates because of their desirable and unique properties compared to conventional materials.

Photodetector devices based on different types of nanostructured materials including graphene and colloidal nanocrystals were investigated. First, graphene layers were mechanically exfoliated and characterized for device fabrication. Self-powered few layers graphene phototransistors were studied. At zero drain voltage bias and room …

Growth And Characterization Of Silicon-Germanium-Tin Semiconductors For Future Nanophotonics Devices, Bader Saad Alharthi

Graduate Theses and Dissertations

The bright future of silicon (Si) photonics has attracted research interest worldwide. The ultimate goal of this growing field is to develop a group IV based Si foundries that integrate Si-photonics with the current complementary metal–oxide–semiconductor (CMOS) on a single chip for mid-infrared optoelectronics and high speed devices. Even though group IV was used in light detection, such as photoconductors, it is still cannot compete with III-V semiconductors for light generation. This is because most of the group IV elements, such as Si and germanium (Ge), are indirect bandgap materials. Nevertheless, Ge and Si attracted industry attention because they are …