Semiconductor and Optical Materials Commons^™

Incorporation Of Zinc In Pre-Alloyed Cuin[Zn]S2/Zns Quantum Dots, Jean Carlos Morales Orocu

Graduate Theses and Dissertations

Since the early 2000s heavy-metal-free quantum dots (QDs) such as CuInS2/ZnS have attempted to replace CdSe, their heavy-metal-containing counterparts. CuInS2/ZnS is synthesized in a two-step process that involves the fabrication of CuInS2 (CIS) nanocrystals (NCs) followed by the addition of zinc precursors. Instead of the usual core/shell architecture often exhibited by binary QDs, coating CIS QDs results in alloyed and/or partially alloyed cation-exchange (CATEX) QDs. The effect that zinc has on the properties of CIS NCs was studied by incorporating zinc during the first step of the synthesis. Different In:Cu:Zn ratios were employed in this study, maintaining a constant 4:1 …

Investigation Of Optical And Structural Properties Of Gesn Heterostructures, Oluwatobi Gabriel Olorunsola

Graduate Theses and Dissertations

Silicon (Si)-based optoelectronics have gained traction due to its primed versatility at developing light-based technologies. Si, however, features indirect bandgap characteristics and suffers relegated optical properties compared to its III-V counterparts. III-Vs have also been hybridized to Si platforms but the resulting technologies are expensive and incompatible with standard complementary-metal-oxide-semiconductor processes. Germanium (Ge), on the other hand, have been engineered to behave like direct bandgap material through tensile strain interventions but are well short of attaining extensive wavelength coverage. To create a competitive material that evades these challenges, transitional amounts of Sn can be incorporated into Ge matrix to form …

Distributed Modeling Approach For Electrical And Thermal Analysis Of High-Frequency Transistors, Amirreza Ghadimi Avval

Graduate Theses and Dissertations

The research conducted in this dissertation is focused on developing modeling approaches for analyzing high-frequency transistors and present solutions for optimizing the device output power and gain. First, a literature review of different transistor types utilized in high-frequency regions is conducted and gallium nitride high electron mobility transistor is identified as the promising device for these bands. Different structural configurations and operating modes of these transistors are explained, and their applications are discussed. Equivalent circuit models and physics-based models are also introduced and their limitations for analyzing the small-signal and large-signal behavior of these devices are explained. Next, a model …

Direct Torque Control For Silicon Carbide Motor Drives, Mohammad Hazzaz Mahmud

Graduate Theses and Dissertations

Direct torque control (DTC) is an extensively used control method for motor drives due to its unique advantages, e.g., the fast dynamic response and the robustness against motor parameters variations, uncertainties, and external disturbances. Using higher switching frequency is generally required by DTC to reduce the torque ripples and decrease stator current total harmonic distortion (THD), which however can lower the drive efficiency. Through the use of the emerging silicon carbide (SiC) devices, which have lower switching losses compared to their silicon counterparts, it is feasible to achieve high efficiency and low torque ripple simultaneously for DTC drives.

To overcome …

Fabrication And Characterization Of Photodetector Devices Based On Nanostructured Materials: Graphene And Colloidal Nanocrystals, Wafaa Gebril

Graduate Theses and Dissertations

Photodetectors are devices that capture light signals and convert them into electrical signals. High performance photodetectors are in demand in a variety of applications, such as optical communication, security, and environmental monitoring. Among many appealing nanomaterials for novel photodetection devices, graphene and semiconductor colloidal nanocrystals are promising candidates because of their desirable and unique properties compared to conventional materials.

Photodetector devices based on different types of nanostructured materials including graphene and colloidal nanocrystals were investigated. First, graphene layers were mechanically exfoliated and characterized for device fabrication. Self-powered few layers graphene phototransistors were studied. At zero drain voltage bias and room …

Si-Based Germanium Tin Photodetectors For Infrared Imaging And High-Speed Detection, Huong Tran

Graduate Theses and Dissertations

Infrared (IR) radiation spans the wavelengths of the windows: (1) near-IR region ranging from 0.8 to 1.0 μm, (2) shortwave IR (SWIR) ranging from 1.0 to 3.0 μm, (3) mid-wave IR (MWIR) region covering from 3.0 to 5.0 μm, (4) longwave IR (LWIR) spanning from 8.0 to 12.0 μm, and (5) very longwave IR extending beyond 12.0 μm. The MWIR and LWIR regions are important for night vision in the military, and since the atmosphere does not absorb at these wavelengths, they are also used for free-space communications and astronomy. Automotive and defect detection in the food industry and electronic …

Performance And Economics Of Solar Inverters And Module Level Power Electronics In A 1 Mw Photovoltaic System, Maxwell Criswell

Biological and Agricultural Engineering Undergraduate Honors Theses

Photovoltaic solar panels convert sunlight to electricity in the form of direct current; therefore, a necessary component of every photovoltaic system is an inverter to convert the electricity to usable alternating current. There are various commercially available inverter technologies manufactured today such as microinverters, string inverters, and central inverters, as well as module level power electronic devices such as DC optimizers that are capable of improving system performance in string and central inverter systems. This thesis compares the performance and economics of five different inverter and module level power electronic systems through model simulation using Helioscope software. The five alternatives …

Characterization Of Gesn Semiconductors For Optoelectronic Devices, Hryhorii Stanchu

Graduate Theses and Dissertations

Germanium-tin alloys with Sn compositions higher than 8 at. % to 10 at. % have recently attracted significant interest as a group IV semiconductor that is ideal for active photonics on a Si substrate. The interest is due to the fact that while at a few percent of Sn, GeSn is an indirect bandgap semiconductor, at about 8 to 10 at. % Sn, GeSn transitions to a direct bandgap semiconductor. This is at first surprising since the solid solubility of Sn in Ge under equilibrium growth conditions is limited to only about 1 at. %. However, under non-equilibrium growth conditions, …