Semiconductor and Optical Materials Commons^™

Fabrication And Characterization Of Electrochemical Glucose Sensors, Mohammed Marie

Graduate Theses and Dissertations

Electrochemical sensors based on the nanostructure of the semiconductor materials are of tremendous interest to be utilized for glucose monitoring. The sensors, based on the nanostructure of the semiconductor materials, are the third generations of the glucose sensors that are fast, sensitive, and cost-effect for glucose monitoring.

Glucose sensors based on pure zinc oxide nanorods (NRs) grown on different substrates, such ITO, FTO, and Si/SiO2/Au, were investigated in this research. Silicon nanowire (NW)- based glucose sensors were also studied. First, an enzyme-based glucose sensor was fabricated out of glass/ITO/ZnO NRs/BSA/GOx/nafion membrane. The sensor was tested amperometrically at different glucose concentrations. …

Comparative Study Of Power Semiconductor Devices In A Multilevel Cascaded H-Bridge Inverter, Kenneth Mordi

Graduate Theses and Dissertations

This thesis compares the performance of a nine-level transformerless cascaded H-bridge (CHB) inverter with integrated battery energy storage system (BESS) using SiC power MOSFETs and Si IGBTs. Two crucial performance drivers for inverter applications are power loss and efficiency. Both of these are investigated in this thesis. Power devices with similar voltage and current ratings are used in the same inverter topology, and the performance of each device is analyzed with respect to switching frequency and operating temperature. The loss measurements and characteristics within the inverter are discussed. The Saber® simulation software was used for the comparisons. The power MOSFET …

Growth And Characterization Of Silicon-Germanium-Tin Semiconductors For Future Nanophotonics Devices, Bader Saad Alharthi

Graduate Theses and Dissertations

The bright future of silicon (Si) photonics has attracted research interest worldwide. The ultimate goal of this growing field is to develop a group IV based Si foundries that integrate Si-photonics with the current complementary metal–oxide–semiconductor (CMOS) on a single chip for mid-infrared optoelectronics and high speed devices. Even though group IV was used in light detection, such as photoconductors, it is still cannot compete with III-V semiconductors for light generation. This is because most of the group IV elements, such as Si and germanium (Ge), are indirect bandgap materials. Nevertheless, Ge and Si attracted industry attention because they are …

Growth And Behaviors Of Inn/Gan Multiple Quantum Wells By Plasma-Assisted Molecular Beam Epitaxy, Chen Li

Graduate Theses and Dissertations

Fully realizing the potential of InGaN semiconductors requires high quality materials with arbitrary In-content. To this date the growth of In-rich InGaN films is still challenging since it suffers from the low growth temperatures and many detrimental alloying problems. InN/GaN multiple quantum wells (MQWs) and super lattices (SLs) are expected to be promising alternatives to random InGaN alloys since in principle they can achieve the equivalent band gap of InGaN random alloys with arbitrarily high In-content and at the same time bypass many growth difficulties.

This dissertation focuses on studying the growth mechanisms, structural properties and energy structures of InN/GaN …

Properties Of Matter, Mike Jackson, Holly Haney

High School Lesson Plans

Students will investigate the relationship(s) between thermal and electrical properties of matter. First, students will use a multimeter and temperature probe to investigate the relationship between electrical resistance and temperature of an electrical resistor composed of metals. They will then graph collected data to analyze the relationship and draw a conclusion as to their relationship. They will then perform the same investigation on a thermal resistor made of a semiconducting substance and analyze that collected data. Finally, using ClaimEvidence-Reasoning (CER) structure, students will use their experimental evidence to state the similarities and differences between the electro-thermal properties of metals and …

Design, Fabrication, And Characterization Of Novel Optoelectronic Devices For Near-Infrared Detection, Ahmad Nusir

Graduate Theses and Dissertations

Investigating semiconductor materials and devices at the nanoscale has become crucial in order to maintain the exponential development in today’s technology. There is a critical need for making devices lower in power consumption and smaller in size. Nanoscale semiconductor materials provide a powerful platform for optoelectronic device engineers. They own interesting properties which include enhanced photoconductivity and size-tunable interband transitions.

In this research, different types of nanostructures were investigated for optoelectronic devices: nanocrystals, nanowires, and thin-films. First, lead selenide nanocrystals with narrow bandgap were synthesized, size-tailored, and functionalized with molecular ligands for the application of uncooled near-infrared photodetectors. The devices …

Glucose Level Estimation Based On Invasive Electrochemical, And Non-Invasive Optical Sensing Methods, Sanghamitra Mandal

Graduate Theses and Dissertations

The purpose of this research is to design and fabricate sensors for glucose detection using inexpensive approaches. My first research approach is the fabrication of an amperometric electrochemical glucose sensor, by exploiting the optical properties of semiconductors and structural properties of nanostructures, to enhance the sensor sensitivity and response time. Enzymatic electrochemical sensors are fabricated using two different mechanisms: (1) the low-temperature hydrothermal synthesis of zinc oxide nanorods, and (2) the rapid metal-assisted chemical etching of silicon (Si) to synthesize Si nanowires. The concept of gold nano-electrode ensembles is then employed to the sensors in order to boost the current …

Design, Fabrication, And Characterization Of All-Inorganic Quantum Dot Light Emitting Diodes, Ramesh Vasan

Graduate Theses and Dissertations

Quantum dot light emitting diodes are investigated as a replacement to the existing organic light emitting diodes that are commonly used for thin film lighting and display applications. In this, all-inorganic quantum dot light emitting diodes with inorganic quantum dot emissive layer and inorganic charge transport layers are designed, fabricated, and characterized. Inorganic materials are more environmentally stable and can handle higher current densities than organic materials. The device consists of CdSe/ZnS alloyed core/shell quantum dots as the emissive layer and metal oxide charge transport layer. The charge transport in these devices is found to occur through resonant energy transfer …