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Full-Text Articles in Materials Science and Engineering
Dysprosium Transport In Nd-Fe-B Pellets, Parawee Pumwongpitak
Dysprosium Transport In Nd-Fe-B Pellets, Parawee Pumwongpitak
Dissertations, Master's Theses and Master's Reports - Open
The addition of heavy rare earth (RE) elements to Nd2Fe14B based magnets to form (Nd,Dy)2Fe14B is known to increase the coercivity and high temperature performance required for hybrid vehicle electric motors and other extreme temperature applications. Attempts to conserve heavy rare earth elements for high temperature (RE)2Fe14B based magnets have led to the development of a grain boundary diffusion process for bulk magnets. This process relies on transport of a heavy rare earth, such as Dy, into a bulk Nd2Fe14B magnet along pores, a low volume fraction of …
Neodymium Oxide Doped Melt Textured Yba₂Cu₃O₇₋ₓ Single Crystals, Fatih Dogan, Stephen W. Sofie, Michael Strasik, Kevin E. Mccrary, Arthur C. Day, William C. Hicks
Neodymium Oxide Doped Melt Textured Yba₂Cu₃O₇₋ₓ Single Crystals, Fatih Dogan, Stephen W. Sofie, Michael Strasik, Kevin E. Mccrary, Arthur C. Day, William C. Hicks
Materials Science and Engineering Faculty Research & Creative Works
Processing, microstructure and property relationships in neodymium oxide doped high temperature superconducting YBa2Cu3O7-x (Y123) were investigated. It has been observed that a small amount (~ 0.25 - 1 mol%) of Nd2O3 results in the formation of nanosized secondary phases which may have a significant effect on the superconducting properties of melt textured Y123 single crystals. It was further observed that addition of Nd2O3 greater than 1 mol% leads to multiple nucleation during solidification of Y123 and results in polycrystalline samples. Melt textured single crystals of Y123 with < 1 mol% were successfully grown and characterized with respect to microstructural development and superconducting properties.
Photoluminescence And Electroluminescence Of Erbium And Neodymium Implanted Semiconductors, James R. Hunter
Photoluminescence And Electroluminescence Of Erbium And Neodymium Implanted Semiconductors, James R. Hunter
Theses and Dissertations
Low temperature photoluminescence (PL) and electroluminescence (EL) measurements were used to study the excitation of erbium- and neodymium-implanted GaAs and AlxGa1-xAs (x=0. 1, 0.3) pn-junctions. The rare-earth (RE) emissions were investigated as a function of ion dose, aluminum mole fraction, laser excitation power, and applied forward bias voltage for the implanted samples. Low temperature PL was also measured from Er doped silicon grown by the metalorganic chemical vapor-phase deposition (MOCVD) method using various growth parameters.. The MOCVD-grown Si samples were studied as a function of metalorganic source temperature, silane (SiH4) flow, growth time, and …