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Full-Text Articles in Engineering Mechanics
Numerical Analysis Of Flow Fields For The Different Models Of The Shrouded Savonius Rotor, Alsaied Khalil Mahmoud, Mohamed Mahgoub Bassuoni, Mohamed Fawzy Obiaa, Ahmed Mostafa Khaira
Numerical Analysis Of Flow Fields For The Different Models Of The Shrouded Savonius Rotor, Alsaied Khalil Mahmoud, Mohamed Mahgoub Bassuoni, Mohamed Fawzy Obiaa, Ahmed Mostafa Khaira
Journal of Engineering Research
In this study, the effect of three different lengths (short, medium, and long) of flanged shrouded Savonius wind turbines is investigated three-dimensional (3-D) numerically by ANSYS-FLUENT. The 3-D numerical model of a simple rotor is validated by comparing the results with previous published experimental ones at the same operating conditions and geometry. The numerical and experimental results indicate a good agreement with each other when using the SST K-ω model with a time step size of 0.0025 s.The analysis of the numerical results of the three flanged shrouded models shows an enhancement of the torque coefficient at tip speed ratio …
Modeling At The Nanometric Scale Of Interfacial Defects Of A Semiconductor Heterostructure In The Isotropic And Anisotropic Cases For The Study Of The Influence Of Stresses, Ahmed Boussaha, Rafik Makhloufi, Rachid Benbouta, Mourad Brioua
Modeling At The Nanometric Scale Of Interfacial Defects Of A Semiconductor Heterostructure In The Isotropic And Anisotropic Cases For The Study Of The Influence Of Stresses, Ahmed Boussaha, Rafik Makhloufi, Rachid Benbouta, Mourad Brioua
Emirates Journal for Engineering Research
This work aims to determine the effect of stresses caused by dislocation networks placed at the interface of a semiconductor heterostructure of the thin GaAs/Si system. In this case, we use a mathematical modeling by Fourier series expansion to numerically simulate the stresses for the two cases of isotropic and anisotropic elasticity in order to predict the mechanical behavior of the heterostructure in the presence of interfacial dislocations while respecting well-defined stress boundary conditions. The elastic stress relaxation is reached for a layer thickness threshold of the GaAs deposit on the Si substrate not exceeding 5 nm.