Engineering Science and Materials Commons^™

Trifluoroiodomethane As An Environmentally Friendly Gas For Water Patterning By Plasma Etching Process, Krit Aryusook

Theses

Trifluoroiodomethane (CF₃I), a non-global warming gas, has been investigated with study as a substitute for typical CFC etchants, such as CF₄ and C₂F₆, used in wafer pattering technology. This investigation was carried out by exposing dielectric films of silicon oxide (SiO₂) and silicon nitride (Si₃N₄) in CF₃I and C₂F₆/O₂ (used as a reference) plasma environments. The etch rate of these films was ascertained as function of applied rf power, etchant gas flow rate, reaction chamber operating pressure, and O_{2 …}

Synthesis And Characterization Of Silicon Dioxide Thin Films By Low Pressure Chemical Vapor Deposition, Sutham Niyomwas

Theses

Ditertiarybutylsilane ( DTBS ) and oxygen have been used as precursors to produce silicon dioxide films by low pressure chemical vapor deposition. These films were synthesized in the temperature range of 600°C to 800°C at constant pressure, and at different gas flow composition. The films were found to be uniform with a composition that varied with deposition temperature and gas flow ratio. The growth rate was found to follow an Arrhenius behavior with an apparent activation energy of 2.62 kcal/mol. The growth rate was seen to increase with higher distance between wafers and to vary as a function of square …

Characterization Of Low Pressure Chemically Vapor Deposited Boron Nitride Films As Low Dielectric Constant Materials, Manish Narayan

Theses

Boron nitride thin films were synthesized on Si and quartz wafers by low pressure chemical vapor deposition using borane triethylamine complex and ammonia as precursors. The films were processed at 400°C, 475°C and 550°C at a constant pressure of 0.5 Torr and at different precursor flow ratios.

The films deposited were uniform, amorphous and the composition of the films varied with deposition temperature and precursor flow ratios. The thickness of the film increased with increasing flow ratio, but, decreased with increasing temperature. The stresses in the film were either mildly tensile or compressive.

The least dielectric constant for the films …