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Articles 1 - 9 of 9
Full-Text Articles in Engineering Science and Materials
Nb₃Sn Coating Of A 2.6 Ghz Srf Cavity By Sputter Deposition Technique, M. S. Shakel, Wei Cao, H. Elsayed-Ali, G. V. Eremeev, U. Pudasaini, A. M. Valente-Feliciano
Nb₃Sn Coating Of A 2.6 Ghz Srf Cavity By Sputter Deposition Technique, M. S. Shakel, Wei Cao, H. Elsayed-Ali, G. V. Eremeev, U. Pudasaini, A. M. Valente-Feliciano
Electrical & Computer Engineering Faculty Publications
Nb₃Sn is of interest as a coating for SRF cavities due to its higher transition temperature Tc ~18.3 K and superheating field Hsh ~400 mT, both are twice that of Nb. Nb₃Sn coated cavities can achieve high-quality factors at 4 K and can replace the bulk Nb cavities operated at 2 K. A cylindrical magnetron sputtering system was built, commissioned, and used to deposit Nb₃Sn on the inner surface of a 2.6 GHz single-cell Nb cavity. With two identical cylindrical magnetrons, this system can coat a cavity with high symmetry and uniform thickness. Using Nb-Sn multilayer sequential sputtering followed by …
Manufacturing Applications Of The One-Dimensional Cutting Stock Problem As A Team Project, Hüseyin Sarper, Nebojsa I. Jaksic
Manufacturing Applications Of The One-Dimensional Cutting Stock Problem As A Team Project, Hüseyin Sarper, Nebojsa I. Jaksic
Electrical & Computer Engineering Faculty Publications
This paper explains the beneficial and practical impact of operations research in two real manufacturing settings. Two manufacturing examples used in student projects were (1) cutting rails (80‘ or 40‘) to manufacture railroad frogs of many sizes and (2) cutting round metal rolls (12‘ to 20‘) to meet customer demands for various lengths of cuts. Student teams in Engineering of Manufacturing Processes and Operations Research courses wrote computer programs. The program first identified all possible patterns that can be cut out of a given stock length. Next, the program created a mathematical model (a text file) as an output. This …
Evaluation Of Procurement Scenarios In One-Dimensional Cutting Stock Problem With A Random Demand Mix, Hüseyin Sarper, Nebojsa I. Jaksic
Evaluation Of Procurement Scenarios In One-Dimensional Cutting Stock Problem With A Random Demand Mix, Hüseyin Sarper, Nebojsa I. Jaksic
Electrical & Computer Engineering Faculty Publications
The one-dimensional cutting stock problem describes the problem of cutting standard length stock material into various specified sizes while minimizing the material wasted (the remnant or drop as manufacturing terms). This computationally complex optimization problem has many manufacturing applications. One-dimensional cutting stock problems arise in many domains such as metal, paper, textile, and wood. To solve it, the problem is formulated as an integer linear model first, and then solved using a common optimizer software. This paper revisits the stochastic version of the problem and proposes a priority-based goal programming approach. Monte Carlo simulation is used to simulate several likely …
Magnetron Sputtering Of Nb3Sn For Srf Cavities, Md. N. Sayeed, H. Elsayed-Ali, G. V. Eremeev, M. J. Kelley, U. Pudasaini, C. E. Reece
Magnetron Sputtering Of Nb3Sn For Srf Cavities, Md. N. Sayeed, H. Elsayed-Ali, G. V. Eremeev, M. J. Kelley, U. Pudasaini, C. E. Reece
Electrical & Computer Engineering Faculty Publications
Nb3Sn is a potential candidate for surface material of SRF cavities since it can enable the cavity to operate at higher temperatures with high quality factor and at an increased accelerating gradient. Nb-Sn films were deposited using magnetron sputtering of individual Nb and Sn targets onto Nb and sapphire substrates. The as-deposited films were annealed at 1200 °C for 3 hours. The films were characterized for their structure by X-ray Diffraction (XRD), morphology by Field Emission Scanning Electron Microscopy (FESEM), and composition by Energy Dispersive X-ray Spectroscopy (EDS) and Time of Flight Secondary Ion Mass Spectrometry (ToF-SIMS). The …
Optical Detection Of Melting Point Depression For Silver Nanoparticles Via In Situ Real Time Spectroscopic Ellipsometry, S. A. Little, T. Begou, R. W. Collins, S. Marsillac
Optical Detection Of Melting Point Depression For Silver Nanoparticles Via In Situ Real Time Spectroscopic Ellipsometry, S. A. Little, T. Begou, R. W. Collins, S. Marsillac
Electrical & Computer Engineering Faculty Publications
Silver nanoparticle films were deposited by sputtering at room temperature and were annealed while monitoring by real time spectroscopic ellipsometry (SE). The nanoparticle dielectric functions (0.75 eV-6.5 eV) obtained by SE were modeled using Lorentz and generalized oscillators for the nanoparticle plasmon polariton (NPP) and interband transitions, respectively. The nanoparticle melting point could be identified from variations in the oscillator parameters during annealing, and this identification was further confirmed after cooling through significant, irreversible changes in these parameters relative to the as-deposited film. The variation in melting point with physical thickness, and thus average nanoparticle diameter, as measured by SE …
Electronic And Structural Properties Of Molybdenum Thin Films As Determined By Real Time Spectroscopic Ellipsometry, J. D. Walker, H. Khatri, V. Ranjan, Jian Li, R. W. Collins, S. Marsillac
Electronic And Structural Properties Of Molybdenum Thin Films As Determined By Real Time Spectroscopic Ellipsometry, J. D. Walker, H. Khatri, V. Ranjan, Jian Li, R. W. Collins, S. Marsillac
Electrical & Computer Engineering Faculty Publications
Walker, J.D., Khatri, H., Ranjan, V., Li, J., Collins, R.W., & Marsillac, S. (2009). Electronic and structural properties of molybdenum thin films as determined by real-time spectroscopic ellipsometry. Applied Physics Letters, 94(14). doi: 10.1063/1.3117222
Evolution Of The Band Structure Of Β-In2 S3−3x O3x Buffer Layer With Its Oxygen Content, N. Barreau, S. Marsillac, J. C. Bernède, L. Assmann
Evolution Of The Band Structure Of Β-In2 S3−3x O3x Buffer Layer With Its Oxygen Content, N. Barreau, S. Marsillac, J. C. Bernède, L. Assmann
Electrical & Computer Engineering Faculty Publications
The evolution of the band structure of β-In2 S3−3x O3x (BISO) thin films grown by physical vapor deposition, with composition x, is investigated using x-ray photoelectron spectroscopy. It is shown that the energy difference between the valence-band level and the Fermi level remains nearly constant as the optical band gap of the films increases. As a consequence, the difference between the conduction band level and the Fermi level increases as much as the optical band gap of the films. The calculation of the electronic affinity [ ] of the BISO thin films shows that it decreases linearly from 4.65 …
Study Of A Growth Instability Of Γ-In[Sub 2]Se[Sub 3], C. Amory, J. C. Bernede, S. Marsillac
Study Of A Growth Instability Of Γ-In[Sub 2]Se[Sub 3], C. Amory, J. C. Bernede, S. Marsillac
Electrical & Computer Engineering Faculty Publications
γ-In[sub 2]Se[sub 3] thin film are deposited for various substrate temperatures in the range of 523–673 K. This study shows that at 573 and 673 K the thin films are well crystallized with grains aligned along the c axis. Between these temperatures, a domain of instability appears where the γ-In[sub 2]Se[sub 3] thin films have a randomly orientation and the c-lattice parameter increases. The presence of the metastable phase κ-In[sub 2]Se[sub 3], during the growth, can explain the existence of this domain of instability. The insertion of Zn during the preparation process allows us to stabilize the phase κ at …
Textured Mos 2 Thin Films Obtained On Tungsten: Electrical Properties Of The W/Mos 2 Contact, E. Gourmelon, J. C. Bernède, J. Pouzet, S. Marsillac
Textured Mos 2 Thin Films Obtained On Tungsten: Electrical Properties Of The W/Mos 2 Contact, E. Gourmelon, J. C. Bernède, J. Pouzet, S. Marsillac
Electrical & Computer Engineering Faculty Publications
Textured films of molybdenum disulfide have been obtained by solid state reaction between the constituents in thin films form when a (200) oriented tungsten sheet is used as substrate. The crystallites have their c axis perpendicular to the plane of the substrate. The annealing conditions are T=1073K and t=30 min. The films are stoichoimetric and p type. Such highly textured films are achieved without foreign atom addition (Ni, Co...). It appears, as shown by x-ray photoelectron spectroscopy, that a thin WS2 layer is present at the interface W/MoS2. The crystallization process is discussed by a …