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Articles 1 - 3 of 3
Full-Text Articles in VLSI and Circuits, Embedded and Hardware Systems
Synthesis Of Static And Dynamic Multiple-Input Translinear Element Networks, Bradley Minch
Synthesis Of Static And Dynamic Multiple-Input Translinear Element Networks, Bradley Minch
Bradley Minch
In this paper, we discuss the process of synthesizing static and dynamic multiple-input translinear element (MITE) networks systematically from high-level descriptions given in the time domain, in terms of static polynomial constraints and algebraic differential equations. We provide several examples, illustrating the process for both static and dynamic system constraints. Although our examples will all involve MITE networks, the early steps of the synthesis process are equally applicable to the synthesis of static and dynamic translinear-loop circuits.
Analog Vlsi Implementation Of Support Vector Machine Learning And Classification, Sheng-Yu Peng, Bradley Minch, Paul Hasler
Analog Vlsi Implementation Of Support Vector Machine Learning And Classification, Sheng-Yu Peng, Bradley Minch, Paul Hasler
Bradley Minch
We propose an analog VLSI approach to implementing the projection neural networks adapted for the supportvector machine with radial-basis kernel functions, which are realized by a proposed floating-gate bump circuit with the adjustable width. Other proposed circuits include simple current mirrors and log-domain Alters. Neither resistors nor amplifiers are employed. Therefore it is suitable for large-scale neural network implementations. We show the measurement results of the bump circuit and verify the resulting analog signal processing system on the transistor level by using a SPICE simulator. The same approach can also be applied to the support vectorregression. With these analog signal …
A Long-Channel Model For The Asymmetric Double-Gate Mosfet Valid In All Regions Of Operation, Abhishek Kammula, Bradley Minch
A Long-Channel Model For The Asymmetric Double-Gate Mosfet Valid In All Regions Of Operation, Abhishek Kammula, Bradley Minch
Bradley Minch
We present a physically based, continuous analytical model for long-channel double-gate MOSFETs. The model is particularly well suited for implementation in circuit simulators due to the simple expressions for the current andthe continuous nature of the derivatives of the current which improves convergence behavior.