Other Electrical and Computer Engineering Commons^™

Gan-Algan Heterostructure Field-Effect Transistors Over Bulk Gan Substrates, M. Asif Khan, J. W. Yang, W. Knap, E. Frayssinet, X. Hu, Grigory Simin, P. Prystawko, M. Leszczynski, I. Grzegory, S. Porowski, R. Gaska, M. S. Shur, B. Beaumont, M. Teisseire, G. Neu

Faculty Publications

We report on AlGaN/GaN heterostructures and heterostructurefield-effect transistors(HFETs) fabricated on high-pressure-grown bulk GaN substrates. The 2delectron gas channel exhibits excellent electronic properties with room-temperature electron Hall mobility as high as μ=1650 cm²/V s combined with a very large electron sheet density n_s≈1.4×10¹³ cm⁻².The HFET devices demonstrated better linearity of transconductance and low gate leakage, especially at elevated temperatures. We also present the comparative study of high-current AlGaN/GaN HFETs(n_sμ>2×10¹⁶ V⁻¹ s⁻¹) grown on bulk GaN, sapphire, and SiC substrates under the same conditions. We demonstrate that in …