Other Electrical and Computer Engineering Commons^™

Lattice And Energy Band Engineering In Alingan/Ga Heterostructures, M. Asif Khan, J. W. Yang, Grigory Simin, R. Gaska, M. S. Shur, Hans-Conrad Zur Loye, G. Tamulaitis, A. Zukauskas, David J. Smith, D. Chandrasekhar, R. Bicknell-Tassius

Faculty Publications

We report on structural, optical, and electrical properties of Al_xIn_yGa_1−x−yNGaNheterostructures grown on sapphire and 6H–SiC substrates. Our results demonstrate that incorporation of In reduces the lattice mismatch, Δa, between AlInGaN and GaN, and that an In to Al ratio of close to 1:5 results in nearly strain-free heterostructures. The observed reduction in band gap,ΔE_g, determined from photoluminescence measurements, is more than 1.5 times higher than estimated from the linear dependencies of Δa and ΔE_g on the In molar fraction. The incorporation of In and resulting changes in the built-in strain in …