Other Electrical and Computer Engineering Commons^™

Sio2-Passivated Lateral-Geometry Gan Transparent Schottky-Barrier Detectors, V. Adivarahan, Grigory Simin, J. W. Yang, A. Lunev, M. Asif Khan, M. Pala, M. Shur, R. Gaska

Faculty Publications

We report on a transparent Schottky-barrierultraviolet detector on GaN layers over sapphire substrates. Using SiO₂ surface passivation, reverse leakage currents were reduced to a value as low as 1 pA at 5 V reverse bias for 200 μm diameter device. The device exhibits a high internal gain, about 50, at low forward biases. The response time (about 15 ns) is RC limited, even in the internal gain regime. A record low level of the noise spectral density, 5×10⁻²³ A²/Hz, was measured at 10 Hz. We attribute this low noise level to the reduced reverse leakage current.