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Electronic Devices and Semiconductor Manufacturing Commons™
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Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Si-Based Germanium Tin Semiconductor Lasers For Optoelectronic Applications, Sattar H. Sweilim Al-Kabi
Si-Based Germanium Tin Semiconductor Lasers For Optoelectronic Applications, Sattar H. Sweilim Al-Kabi
Graduate Theses and Dissertations
Silicon-based materials and optoelectronic devices are of great interest as they could be monolithically integrated in the current Si complementary metal-oxide-semiconductor (CMOS) processes. The integration of optoelectronic components on the CMOS platform has long been limited due to the unavailability of Si-based laser sources. A Si-based monolithic laser is highly desirable for full integration of Si photonics chip. In this work, Si-based germanium-tin (GeSn) lasers have been demonstrated as direct bandgap group-IV laser sources. This opens a completely new avenue from the traditional III-V integration approach. In this work, the material and optical properties of GeSn alloys were comprehensively studied. …
Electrical Characterization Of Irradiated Semiconducting Amorphous Hydrogenated Boron Carbide, George Glen Peterson
Electrical Characterization Of Irradiated Semiconducting Amorphous Hydrogenated Boron Carbide, George Glen Peterson
Department of Mechanical and Materials Engineering: Dissertations, Theses, and Student Research
Semiconducting amorphous partially dehydrogenated boron carbide has been explored as a neutron voltaic for operation in radiation harsh environments, such as on deep space satellites/probes. A neutron voltaic device could also be used as a solid state neutron radiation detector to provide immediate alerts for radiation workers/students, as opposed to the passive dosimetry badges utilized today. Understanding how the irradiation environment effects the electrical properties of semiconducting amorphous partially dehydrogenated boron carbide is important to predicting the stability of these devices in operation. p-n heterojunction diodes were formed from the synthesis of semiconducting amorphous partially dehydrogenated boron carbide on silicon …