Open Access. Powered by Scholars. Published by Universities.®
Electronic Devices and Semiconductor Manufacturing Commons™
Open Access. Powered by Scholars. Published by Universities.®
- Institution
- Publication
- File Type
Articles 1 - 4 of 4
Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Science Behind The Magnetic Field Therapy, D. B. Thombre,, Megha D. Thombre
Science Behind The Magnetic Field Therapy, D. B. Thombre,, Megha D. Thombre
Innovative Research Publications IRP India
Magnetic therapy is the use of magnets to relieve pain in various areas of the body. It is the simplest, cheapest and entirely painless system of treatment with no side effects. In present article, discussion of fundamental aspect about the application of magnetic field (Natural and artificial) and how it apply to the human body with suggestions. Magnetic field is produce by magnet or electromagnetic generating devices are able to penetrate the human body because human body is magnetic hence magnetic field affect the functioning of human body. Suggestions are, High blood pressure person sleep with foots towards west and …
Mems Resonant Magnetic Field Sensor Based On An Aln/Fegab Bilayer Nano-Plate Resonator, Yu Hui, Tianxiang Nan, Nian Sun, Matteo Rinaldi
Mems Resonant Magnetic Field Sensor Based On An Aln/Fegab Bilayer Nano-Plate Resonator, Yu Hui, Tianxiang Nan, Nian Sun, Matteo Rinaldi
Nian X. Sun
This paper reports on the first demonstration of an ultra-miniaturized, high frequency (215 MHz) and high sensitivity MEMS resonant magnetic field sensor based on an AlN/FeGaB bilayer nano-plate resonator capable of detecting magnetic field at nano-Tesla level. Despite of the reduced volume and the high operating frequency of the sensor, high electromechanical performances were achieved (quality factor Q ≈ 511 and electromechanical coupling coefficient kt² ≈ 1.63%). This first prototype was characterized for different magnetic field levels from 0 to 152 Oe showing a frequency sensitivity of ~ 1 Hz/nT and a limit of detection of ~ 10 nT.
Mems Resonant Magnetic Field Sensor Based On An Aln/Fegab Bilayer Nano-Plate Resonator, Yu Hui, Tianxiang Nan, Nian Sun, Matteo Rinaldi
Mems Resonant Magnetic Field Sensor Based On An Aln/Fegab Bilayer Nano-Plate Resonator, Yu Hui, Tianxiang Nan, Nian Sun, Matteo Rinaldi
Tianxiang Nan
This paper reports on the first demonstration of an ultra-miniaturized, high frequency (215 MHz) and high sensitivity MEMS resonant magnetic field sensor based on an AlN/FeGaB bilayer nano-plate resonator capable of detecting magnetic field at nano-Tesla level. Despite of the reduced volume and the high operating frequency of the sensor, high electromechanical performances were achieved (quality factor Q ≈ 511 and electromechanical coupling coefficient kt² ≈ 1.63%). This first prototype was characterized for different magnetic field levels from 0 to 152 Oe showing a frequency sensitivity of ~ 1 Hz/nT and a limit of detection of ~ 10 nT.
Mems Resonant Magnetic Field Sensor Based On An Aln/Fegab Bilayer Nano-Plate Resonator, Yu Hui, Tianxiang Nan, Nian Sun, Matteo Rinaldi
Mems Resonant Magnetic Field Sensor Based On An Aln/Fegab Bilayer Nano-Plate Resonator, Yu Hui, Tianxiang Nan, Nian Sun, Matteo Rinaldi
Matteo Rinaldi
This paper reports on the first demonstration of an ultra-miniaturized, high frequency (215 MHz) and high sensitivity MEMS resonant magnetic field sensor based on an AlN/FeGaB bilayer nano-plate resonator capable of detecting magnetic field at nano-Tesla level. Despite of the reduced volume and the high operating frequency of the sensor, high electromechanical performances were achieved (quality factor Q ≈ 511 and electromechanical coupling coefficient kt² ≈ 1.63%). This first prototype was characterized for different magnetic field levels from 0 to 152 Oe showing a frequency sensitivity of ~ 1 Hz/nT and a limit of detection of ~ 10 nT.