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Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Evaluation And Design Optimization Of Piezoresistive Gauge Factor Of Thick-Film Resistors, Sherra E. Kerns, David V. Kerns, C Song, J. L. Davidson, W. P. Kang
Evaluation And Design Optimization Of Piezoresistive Gauge Factor Of Thick-Film Resistors, Sherra E. Kerns, David V. Kerns, C Song, J. L. Davidson, W. P. Kang
Sherra E. Kerns
On the basis of the analysis of all the thick- film design methodologies, the authors designed a test sample on which four different length-over-width ratios of resistors were designed. They found that the length-over-width ratio will substantially affect the gauge factor in some cases, in contrast to prior research. This can be modeled to generate a linear predictive model, The sensors designed on the insulator and the sensors underneath the insulator were also studied in order to simulate the multilayer hybrid technology and study the effects of insulator-resistor-substrate surface interaction. It is demonstrated that design techniques can affect the strain …
Simulation Of Gallium Arsenide Electroluminescence Spectra In Avalanche Breakdown Using Self-Absorption And Recombination Models, David Kerns, Sherra Kerns, M Lahbabi, A Ahaitouf, E Abarkan, M Fliyou, A Hoffmann, J Charles, Bharat Bhuva
Simulation Of Gallium Arsenide Electroluminescence Spectra In Avalanche Breakdown Using Self-Absorption And Recombination Models, David Kerns, Sherra Kerns, M Lahbabi, A Ahaitouf, E Abarkan, M Fliyou, A Hoffmann, J Charles, Bharat Bhuva
Sherra E. Kerns
Light emission from gallium arsenide (GaAs) p–n junctions biased in avalanche breakdown have been modeled over the range of 1.4–3.4 eV. The model emphasizes direct and indirect recombination processes and bulk self-absorption. Comparisons between measured and simulated spectra for sample junctions from custom and commercially fabricated GaAs devices demonstrate that the model is simple, accurate, and consistent with fundamental physical device theory. The model also predicts the junction depth with accuracy.