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Electronic Devices and Semiconductor Manufacturing Commons™
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Articles 1 - 4 of 4
Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Modeling All Spin Logic: Multi-Magnet Networks Interacting Via Spin Currents, Srikant Srinivasan
Modeling All Spin Logic: Multi-Magnet Networks Interacting Via Spin Currents, Srikant Srinivasan
Srikant Srinivasan
All-spin logic (ASL) represents a new approach to information processing where the roles of charges and capacitors in CMOS are played by spins and magnets. This paper (1) summarizes our earlier work on the input-output isolation and intrinsic directivity of ASL devices, (2) uses an experimentally benchmarked simulator for multimagnet networks coupled by spin transport channels to demonstrate a combinational NAND gate, and (3) describes the natural mapping of such ASL networks into neuromorphic circuits suitable for hybrid analog/digital information processing.
Unidirectional Information Transfer With Cascaded All Spin Logic Devices: A Ring Oscillator, Srikant Srinivasan
Unidirectional Information Transfer With Cascaded All Spin Logic Devices: A Ring Oscillator, Srikant Srinivasan
Srikant Srinivasan
The authors have presented the first simulator that simultaneously describes magnetization dynamics as well as spin transport in multi-magnet ASL networks and used it to demonstrate the possibility of large scale functional spin logic blocks through the example of an All Spin ring oscillator.
Switching Energy-Delay Of All Spin Logic Devices, Srikant Srinivasan
Switching Energy-Delay Of All Spin Logic Devices, Srikant Srinivasan
Srikant Srinivasan
A recent proposal called all spin logic (ASL) proposes to store information in nanomagnets that communicate with spin currents in order to construct spin based digital circuits. We present a coupled magnetodynamics/spin-transport model for ASL devices that is based on established physics and is benchmarked against available experimental data. This model is used to show the linear dependence of switching energy and quadratic dependence of energy-delay of ASL devices on the number of Bohr magnetons comprising a nanomagnet. A scaling scheme that could lower the energy-delay of spin-torque switching while maintaining thermal stability is discussed.
Valley Splitting In Si Quantum Dots Embedded In Sige, Srikant Srinivasan
Valley Splitting In Si Quantum Dots Embedded In Sige, Srikant Srinivasan
Srikant Srinivasan
We examine energy spectra of Si quantum dots embedded in Si0.75Ge0.25 buffers using atomistic numerical calculations for dimensions relevant to qubit implementations. The valley degeneracy of the lowest orbital state is lifted and valley splitting fluctuates with monolayer frequency as a function of the dot thickness. For dot thicknesses ≤ 6 nm, valley splitting is found to be >150 μeV. Using the unique advantage of atomistic calculations, we analyze the effect of buffer disorder on valley splitting. Disorder in the buffer leads to the suppression of valley splitting by a factor of 2.5; the splitting fluctuates with ≈ 20 μeV …