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Physics And Statistics Of Non-Ohmic Shunt Conduction And Metastability In Amorphous Silicon P-I-N Solar Cells, Sourabh Dongaonkar, Karthik Yogendra, Souvik Mahapatra, Muhammad Alam

Sourabh Dongaonkar

In this paper, we present a physical model of the non- Ohmic shunt current ISH in amorphous silicon (a-Si:H) p–i–n solar cells and validate it with detailed measurements. This model is based on space-charge-limited (SCL) transport through localized p–i–p shunt paths. These paths can arise from n-contact metal incorporation in the a-Si:H layer, causing the (n)a-Si:H to be counterdoped to p-type. The model not only explains all the electrical characteristics of preexisting shunts but also provides insight into the metastable switching that is observed in the shunt-dominated region of dark current as well.We first verify the SCL model using simulations …