Electronic Devices and Semiconductor Manufacturing Commons^™

Physical Mechanisms Limiting The Manufacturing Uniformity Of Millimeter-Wave Power Inp Hemt's, Sergei Krupenin, Roxann Blanchard, Mark Somerville, Jesus Del Alamo, K. Duh, Pane Chao

Mark Somerville

We have developed a methodology to diagnose the physical mechanisms limiting the manufacturing uniformity of millimeter-wave power InAlAs/InGaAs HEMT's on InP. A statistical analysis was carried out on dc figures of merit obtained from a large number of actual devices on an experimental wafer. Correlation studies and principal component analysis of the results indicated that variations in Si delta-doping concentration introduced during molecular-beam epitaxy accounted for more than half of the manufacturing variance. Variations in the gate-source distance that is determined by the electron-beam alignment in the gate formation process were found to be the second leading source of manufacturing …