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Electronic Devices and Semiconductor Manufacturing Commons™
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- Diamond (2)
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Articles 1 - 5 of 5
Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Vacuum Microelectronic Integrated Differential Amplifier, S. Hsu, W. Kang, J. Davidson, J. Huang, David Kerns, Jr.
Vacuum Microelectronic Integrated Differential Amplifier, S. Hsu, W. Kang, J. Davidson, J. Huang, David Kerns, Jr.
David V. Kerns
Reported is a novel vacuum field emission transistor (VFET) differential amplifier (diff-amp) utilising nanocrystalline diamond emitters with self-aligned gate partitions. The integrated VFET diff-amp was fabricated by a dual-mask self-aligned mould transfer method in conjunction with chemical vapour deposited nanodiamond. Identical pairs of devices with well-matched field emission transistor characteristics were obtained, realising a negligible common-mode gain, high differential-mode gain, and large common-mode rejection ratio (CMRR) of 55 dB. The emission current was validated by a modified Fowler-Nordheim equation in transistor configuration, and the CMRR was modelled by an equivalent half-circuit with the calculated result found to agree well with …
Measurement Of Metal Migration On Thick Film Piezoresistors And Their Termination, David V. Kerns, C Song, J L. Davidson, D L. Kinser
Measurement Of Metal Migration On Thick Film Piezoresistors And Their Termination, David V. Kerns, C Song, J L. Davidson, D L. Kinser
David V. Kerns
Metal migration from the thick-film termination can affect not only the electrical characteristics but also the gauge factor or piezoresistive coefficient of thick-film sensors. Four sets of sensors with different ratios were designed to test the influence of the terminal metal migration effects on the gauge factors and resistivity of thick-film resistors. In all the cases, the shortest resistors have a lower gauge factor and a large deviation ofresistances. The longer resistors will have better electrical parameters. SEM (scanning electron microscope) studies showed this interaction at the interface between the terminal and the resistor. The same distance of terminal diffusion …
A Study Of Diamond Field Emission Using Micro-Patterned Monolithic Diamond Tips With Different Sp2 Contents, David Kerns, A Wisitsora-At, W Kang, J Davidson
A Study Of Diamond Field Emission Using Micro-Patterned Monolithic Diamond Tips With Different Sp2 Contents, David Kerns, A Wisitsora-At, W Kang, J Davidson
David V. Kerns
Electron field emission from an array of micro-patterned monolithic diamond tips with varying sp2 content has been systematically investigated. The experimental results show that the field emission characteristics can be improved and the turn-on electric field can be reduced more than 50% by increasing sp2 content. Two hypotheses are proposed as an explanation of the effect of sp2 content on the field emission characteristics of diamond tips: the lowering of the work function due to defect-induced band generated bysp2 content in the diamond lattice and an increase in the field enhancement factor due to embedded sp2–diamond–sp2 cascaded microstructures.
Evaluation And Design Optimization Of Piezoresistive Gauge Factor Of Thick-Film Resistors, Sherra E. Kerns, David V. Kerns, C Song, J. L. Davidson, W. P. Kang
Evaluation And Design Optimization Of Piezoresistive Gauge Factor Of Thick-Film Resistors, Sherra E. Kerns, David V. Kerns, C Song, J. L. Davidson, W. P. Kang
David V. Kerns
On the basis of the analysis of all the thick- film design methodologies, the authors designed a test sample on which four different length-over-width ratios of resistors were designed. They found that the length-over-width ratio will substantially affect the gauge factor in some cases, in contrast to prior research. This can be modeled to generate a linear predictive model, The sensors designed on the insulator and the sensors underneath the insulator were also studied in order to simulate the multilayer hybrid technology and study the effects of insulator-resistor-substrate surface interaction. It is demonstrated that design techniques can affect the strain …
Simulation Of Gallium Arsenide Electroluminescence Spectra In Avalanche Breakdown Using Self-Absorption And Recombination Models, David Kerns, Sherra Kerns, M Lahbabi, A Ahaitouf, E Abarkan, M Fliyou, A Hoffmann, J Charles, Bharat Bhuva
Simulation Of Gallium Arsenide Electroluminescence Spectra In Avalanche Breakdown Using Self-Absorption And Recombination Models, David Kerns, Sherra Kerns, M Lahbabi, A Ahaitouf, E Abarkan, M Fliyou, A Hoffmann, J Charles, Bharat Bhuva
David V. Kerns
Light emission from gallium arsenide (GaAs) p–n junctions biased in avalanche breakdown have been modeled over the range of 1.4–3.4 eV. The model emphasizes direct and indirect recombination processes and bulk self-absorption. Comparisons between measured and simulated spectra for sample junctions from custom and commercially fabricated GaAs devices demonstrate that the model is simple, accurate, and consistent with fundamental physical device theory. The model also predicts the junction depth with accuracy.