Open Access. Powered by Scholars. Published by Universities.®
Electronic Devices and Semiconductor Manufacturing Commons™
Open Access. Powered by Scholars. Published by Universities.®
- Institution
- Keyword
-
- Articles (2)
- COLLECTOR (2)
- Chemical sensors (2)
- ELECTRICAL WITH SOLAR ENERGY (2)
- Electrical Engineering (2)
-
- Field effect transistors (2)
- Floating-gate devices (2)
- MODFETs (2)
- Microfluidic channels (2)
- SMART GRID (2)
- Bioinformatics (1)
- Biomedical (1)
- CIRCUIT BREAKER REALY OPERATION (1)
- Contact angle (1)
- Electric currents (1)
- Electric fields (1)
- Electrowetting actuation (1)
- Heterojunctions (1)
- III-V semiconductors (1)
- LOAD DEVIDED (1)
- Leakage currents (1)
- Microwaves (1)
- NEW TECHNOLOGY (1)
- Neuromorphic sensing (1)
- Neuron MOS transistors (1)
- PDA mobile video telementoring endoscopic (1)
- SOLAR POWER GENERATION (1)
- SOLAR POWER GENERATION PPT (1)
- SWITCH YARD LINES (1)
- SWITCH YARD OPERATION (1)
- File Type
Articles 1 - 9 of 9
Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Algan/Gan Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors On Sic Substrates, M. Asif Khan, X. Hu, A. Tarakji, Grigory Simin, J. Yang, R. Gaska, M. S. Shur
Algan/Gan Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors On Sic Substrates, M. Asif Khan, X. Hu, A. Tarakji, Grigory Simin, J. Yang, R. Gaska, M. S. Shur
Grigory Simin
We report on AlGaN/GaN metal–oxide–semiconductor heterostructurefield-effect transistors (MOS-HFETs) grown over insulating 4H–SiC substrates. We demonstrate that the dc and microwave performance of the MOS-HFETs is superior to that of conventional AlGaN/GaN HFETs, which points to the high quality of SiO2/AlGaNheterointerface. The MOS-HFETs could operate at positive gate biases as high as +10 V that doubles the channel current as compared to conventional AlGaN/GaN HFETs of a similar design. The gate leakage current was more than six orders of magnitude smaller than that for the conventional AlGaN/GaN HFETs. The MOS-HFETs exhibited stable operation at elevated temperatures up to 300 °Cwith excellent …
Mechanism Of Radio-Frequency Current Collapse In Gan-Algan Field-Effect Transistors, A. Tarakji, Grigory Simin, N. Ilinskaya, X. Hu, A. Kumar, A. Koudymov, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska
Mechanism Of Radio-Frequency Current Collapse In Gan-Algan Field-Effect Transistors, A. Tarakji, Grigory Simin, N. Ilinskaya, X. Hu, A. Kumar, A. Koudymov, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska
Grigory Simin
The mechanism of radio-frequency current collapse in GaN–AlGaN heterojunctionfield-effect transistors(HFETs) was investigated using a comparative study of HFET and metal–oxide–semiconductor HFET current–voltage (I–V) and transfer characteristics under dc and short-pulsed voltage biasing. Significant current collapse occurs when the gate voltage is pulsed, whereas under drain pulsing the I–V curves are close to those in steady-state conditions. Contrary to previous reports, we conclude that the transverse electric field across the wide-band-gap barrier layer separating the gate and the channel rather than the gate or surface leakage currents or high-field effects in the gate–drain spacing is responsible for the current collapse. We …
Wireless Transmission Network : A Imagine, Radhey Shyam Meena Engineer, Neeraj Kumar Garg Asst.Prof
Wireless Transmission Network : A Imagine, Radhey Shyam Meena Engineer, Neeraj Kumar Garg Asst.Prof
Radhey Shyam Meena
World cannot be imagined without electrical power. Generally the power is transmitted through transmission networks. This paper describes an original idea to eradicate the hazardous usage of electrical wires which involve lot of confusion in particularly organizing them. Imagine a future in which wireless power transfer is feasible: cell phones, household robots, mp3 players, laptop computers and other portable electronic devices capable of charging themselves without ever being plugged in freeing us from that final ubiquitous power wire. This paper includes the techniques of transmitting power without using wires with an efficiency of about 95% with non-radioactivemethods. In this paper …
Battery Energy Storage System In Solar Power Generation, Radhey Shyam Meena Er., Deepa Sharma
Battery Energy Storage System In Solar Power Generation, Radhey Shyam Meena Er., Deepa Sharma
Radhey Shyam Meena
Grid-connected solar PV dramatically changes the load profile of an electric utility customer. The expected widespread adoption of solar generation by customers on the distribution system poses significant challenges to system operators both in transient and steady state operation, from issues including voltage swings, sudden weather-induced changes in generation, and legacy protective devices designed with one-way power flow in mind
Battery Energy Storage System In Solar Power Generation, Radhey Shyam Meena Er.
Battery Energy Storage System In Solar Power Generation, Radhey Shyam Meena Er.
Radhey Shyam Meena
As solar photovoltaic power generation becomes more commonplace, the inherent intermittency of the solar resource poses one of the great challenges to those who would design and implement the next generation smart grid. Specifically, grid-tied solar power generation is a distributed resource whose output can change extremely rapidly, resulting in many issues for the distribution system operator with a large quantity of installed photovoltaic devices. Battery energy storage systems are increasingly being used to help integrate solar power into the grid. These systems are capable of absorbing and delivering both real and reactive power with sub-second response times. With these …
Integration Of Chemical Sensing And Electrowetting Actuation On Chemoreceptive Neuron Mos (Cνmos) Transistors, Nick Shen, Zengtao Liu, Blake Jacquot, Bradley Minch, Edwin Kan
Integration Of Chemical Sensing And Electrowetting Actuation On Chemoreceptive Neuron Mos (Cνmos) Transistors, Nick Shen, Zengtao Liu, Blake Jacquot, Bradley Minch, Edwin Kan
Bradley Minch
An integration of chemical sensors and electrowetting actuators based on the chemoreceptive neuron MOS (CνMOS) transistors has brought forth a novel system-on-chip approach to the microfluidic system. The extended floating-gate structure of the CνMOS transistors enables monolithic sensing and actuating schemes. The sensors with generic chemical receptive areas have been characterized with various fluids, and have demonstrated a high sensitivity from the current differentiation and a large dynamic range from threshold-voltage shifts in sensing polar and electrolytic liquids. The actuators have illustrated valve functions based on contact-angle modification by nonvolatile charge injection into the channel wall. Electrochemical models for sensing …
Charge-Based Chemical Sensors: A Neuromorphic Approach With Chemoreceptive Neuron Mos (Cvmos) Transistors, Nick Shen, Zengtao Liu, Chungho Lee, Bradley Minch, Edwin Kan
Charge-Based Chemical Sensors: A Neuromorphic Approach With Chemoreceptive Neuron Mos (Cvmos) Transistors, Nick Shen, Zengtao Liu, Chungho Lee, Bradley Minch, Edwin Kan
Bradley Minch
A novel chemoreceptive neuron MOS (CνMOS) transistor with an extended floating-gate structure has been designed with several individual features that significantly facilitate system integration of chemical sensing. We have fabricated CνMOS transistors with generic molecular receptive areas and have characterized them with various fluids. We use an insulating polymer layer to provide physical and electrical isolation for sample fluid delivery. Experimental results from these devices have demonstrated both high sensitivity via current differentiation and large dynamic range from threshold voltage shifts in sensing both polar and electrolytic liquids. We have established electrochemical models for both steady-state and transient analyses. Our …
Switch Yard Operation In Thermal Power Plant(Katpp Jhalawar Rajasthan), Radhey Shyam Meena Er.
Switch Yard Operation In Thermal Power Plant(Katpp Jhalawar Rajasthan), Radhey Shyam Meena Er.
Radhey Shyam Meena
Switchyard Provides the facilities for switching ,protection & Control of electric power. To handle high Voltage power with proper Safety measures. To isolate the noises coming from the grid with true 50Hz power SWITCH YARD IS IMPORTANT PART IN THERMAL PLANT. IN KALISINDH THERMAL 400KV AND 220KV SWITCH YARD LOCATED.
The Personal Digital Assistant (Pda) As A Tool For Telementoring Endoscopic Procedures., Cody K. Bumgardner
The Personal Digital Assistant (Pda) As A Tool For Telementoring Endoscopic Procedures., Cody K. Bumgardner
Cody Bumgardner
Abstract: The telementoring of surgical procedures is currently achieved via a wired infrastructure that usually requires sophisticated videoconference systems. This project represents the first step in assessing the potential for using handheld computers as a mobile alternative to current telementoring systems. Specifically, this project compares a handheld computer to a standard CRT monitor regarding their capability to accurately display video images from an endoscopic procedure. Video images from two previously recorded endoscopic procedures were transmitted from a standard VCR to: 1) a handheld computer (iPAQ 3670 running Pocket PC) via a wireless LAN and 2) a standard CRT monitor via …