Electronic Devices and Semiconductor Manufacturing Commons^™

Investigation Of Optical And Structural Properties Of Gesn Heterostructures, Oluwatobi Gabriel Olorunsola

Graduate Theses and Dissertations

Silicon (Si)-based optoelectronics have gained traction due to its primed versatility at developing light-based technologies. Si, however, features indirect bandgap characteristics and suffers relegated optical properties compared to its III-V counterparts. III-Vs have also been hybridized to Si platforms but the resulting technologies are expensive and incompatible with standard complementary-metal-oxide-semiconductor processes. Germanium (Ge), on the other hand, have been engineered to behave like direct bandgap material through tensile strain interventions but are well short of attaining extensive wavelength coverage. To create a competitive material that evades these challenges, transitional amounts of Sn can be incorporated into Ge matrix to form …

Gesn Devices For Short-Wave Infrared Optoelectronics, Benjamin Ryan Conley

Graduate Theses and Dissertations

The electronics industry has a large silicon infrastructure for the manufacture of complementary-metal oxide semiconductor (CMOS) based electronics. The increasing density of Si based circuits has set a pace that is now pushing the physical limits of connectivity between devices over conventional wire based links. This has driven the increasing interest in Si based optoelectronics and to use the groundwork already established by the electronics industry for lower cost optical communications. The greatest limitation to this effort has been the incorporation of a Si based laser, which requires integration of a direct bandgap material within this CMOS process.

The Ge1-xSnx …