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Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Influence Of Rhodium And Iridium Impurity Atoms On The Capacitive Characteristics Of Si-Siо2 Structures, Khojakbar S. Daliev, Shakhriyor Kh. Yulchiev, Xotamjon J. Mansurov
Influence Of Rhodium And Iridium Impurity Atoms On The Capacitive Characteristics Of Si-Siо2 Structures, Khojakbar S. Daliev, Shakhriyor Kh. Yulchiev, Xotamjon J. Mansurov
Euroasian Journal of Semiconductors Science and Engineering
It was found that the doping of the semiconductor substrate with Rh and Ir atoms leads to the increase in the density of surface states at the Si – SiO2 interface. It is determined that the surface states, due to the presence of an impurity Rh and Ir are effective generation centers.
Structural Features Of The Solid Solution (Gaas)1-X-Y(Ge2)X(Znse)Y With Quantum Dots (0≤X≤0,17; 0≤Y≤0,14), Sirojiddin Z. Zainabidinov, Khatamjon J. Mansurov, Akramjon Y. Boboev, Hkushruy A. Makhmudov
Structural Features Of The Solid Solution (Gaas)1-X-Y(Ge2)X(Znse)Y With Quantum Dots (0≤X≤0,17; 0≤Y≤0,14), Sirojiddin Z. Zainabidinov, Khatamjon J. Mansurov, Akramjon Y. Boboev, Hkushruy A. Makhmudov
Euroasian Journal of Semiconductors Science and Engineering
X-ray diffraction studies showed that the resulting film has a sphalerite structure and is single-crystal with the (100) orientation. The lattice parameter of the film is af = 0.56697 nm. By atomic force microscope was shown the possibility of obtaining a semiconductor heterostructure with quantum dots by the method of liquid phase epitaxy.