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Epsilon-Near-Zero

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Full-Text Articles in Electronic Devices and Semiconductor Manufacturing

Low Insertion-Loss Nanophotonic Modulators Through Epsilon-Near-Zero Material-Based Plasmon-Assisted Approach For Integrated Photonics, Mohammad Ariful Hoque Sojib Jan 2022

Low Insertion-Loss Nanophotonic Modulators Through Epsilon-Near-Zero Material-Based Plasmon-Assisted Approach For Integrated Photonics, Mohammad Ariful Hoque Sojib

Theses and Dissertations

Electro-optic/absorption Modulators (EOM/EAMs) encode high-frequency electrical signals into optical signals. With the requirement of large packing density, device miniaturization is possible by confining light in a sub-wavelength dimension by utilizing the plasmonic phenomenon. In plasmon, energy gets transferred from light to the form of oscillation of free electrons on a surface of a metal at an interface between the metal and a dielectric. Plasmonic provides increased light-matter interaction (LMI) and thus making the light more sensitive to local refractive index change. Plasmonic-based integrated nanophotonic modulators, despite their promising features, have one key limiting factor of large Insertion Loss (IL) which …