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Full-Text Articles in Electronic Devices and Semiconductor Manufacturing

Growth Of Zn-Polar Bemgzno/Zno Heterostructure With Two Dimensional Electron Gas (2deg) And Fabrication Of Silver Schottky Diode On Bemgzno/Zno Heterostructure., Md Barkat Ullah Jan 2017

Growth Of Zn-Polar Bemgzno/Zno Heterostructure With Two Dimensional Electron Gas (2deg) And Fabrication Of Silver Schottky Diode On Bemgzno/Zno Heterostructure., Md Barkat Ullah

Theses and Dissertations

Title of dissertation: GROWTH OF Zn POLAR BeMgZnO/ZnO HETEROSTRUCTURE WITH TWO DIMENSIONAL ELECTRON GAS (2DEG) AND FABRICATION OF SILVER SCHOTTKY DIODE ON BeMgZnO/ZnO HETEROSTRUCTURE

By Md Barkat Ullah, Ph.D

A dissertation submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy in Electrical and Computer Engineering at Virginia Commonwealth University.

Virginia Commonwealth University,2017

Major Director: Dr. Hadis Morkoç, Professor, Electrical and Computer Engineering

This thesis focuses on growth of Zn polar BeMgZnO/ZnO heterostructure on GaN/sapphire template with two dimensional electron gas (2DEG) for the application of UV photodetector/emitter and high speed electronics. The motivation of using …


Optical Spectroscopy Of Wide Bandgap Semiconductor Heterostructures And Group-Iv Alloy Quantum Dots, Tanner A. Nakagawara Jan 2017

Optical Spectroscopy Of Wide Bandgap Semiconductor Heterostructures And Group-Iv Alloy Quantum Dots, Tanner A. Nakagawara

Theses and Dissertations

Efficient and robust blue InGaN multiple quantum well (MQW) light emitters have become ubiquitous; however, they still have unattained theoretical potential. It is widely accepted that “localization” of carriers due to indium fluctuations theoretically enhance their efficiency by moderating defect-associated nonradiative recombination. To help develop a complete understanding of localization effects on carrier dynamics, this thesis explores degree of localization in InGaN MQWs and its dependence on well thickness and number of wells, through temperature and power dependent photoluminescence measurements. Additionally, silicon-compatible, nontoxic, colloidally synthesizable 2-5 nm Ge1-xSnx alloy quantum-dots (QDs) are explored for potential visible to …


Optical Investigations Of Ingan Heterostructures And Gesn Nanocrystals For Photonic And Phononic Applications: Light Emitting Diodes And Phonon Cavities, Shopan D. Hafiz Jan 2016

Optical Investigations Of Ingan Heterostructures And Gesn Nanocrystals For Photonic And Phononic Applications: Light Emitting Diodes And Phonon Cavities, Shopan D. Hafiz

Theses and Dissertations

InGaN heterostructures are at the core of blue light emitting diodes (LEDs) which are the basic building blocks for energy efficient and environment friendly modern white light generating sources. Through quantum confinement and electronic band structure tuning on the opposite end of the spectrum, Ge1−xSnx alloys have recently attracted significant interest due to its potential role as a silicon compatible infra-red (IR) optical material for photodetectors and LEDs owing to transition to direct bandgap with increasing Sn. This thesis is dedicated to establishing an understanding of the optical processes and carrier dynamics in InGaN heterostructures for achieving …