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Extending Device Performance In Photonic Devices Using Piezoelectric Properties, Gregory Edward Triplett

Electrical and Computer Engineering Publications

This study focuses on the influence of epi-layer strain and piezoelectric effects in asymmetric GaInAs/GaAlAs action regions that potentially lead to intra-cavity frequency mixing. The theoretical limits for conduction and valence band offsets in lattice-matched semiconductor structures have resulted in the deployment of non-traditional approaches such as strain compensation to extend wavelength in intersubband devices, where strain limits are related to misfit dislocation generation. Strain and piezoelectric effects have been studied and verified using select photonic device designs. Metrics under this effort also included dipole strength, oscillator strength, and offset of energy transitions, which are strongly correlated with induced piezoelectric …