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Growth Of Zn-Polar Bemgzno/Zno Heterostructure With Two Dimensional Electron Gas (2deg) And Fabrication Of Silver Schottky Diode On Bemgzno/Zno Heterostructure., Md Barkat Ullah
Theses and Dissertations
Title of dissertation: GROWTH OF Zn POLAR BeMgZnO/ZnO HETEROSTRUCTURE WITH TWO DIMENSIONAL ELECTRON GAS (2DEG) AND FABRICATION OF SILVER SCHOTTKY DIODE ON BeMgZnO/ZnO HETEROSTRUCTURE
By Md Barkat Ullah, Ph.D
A dissertation submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy in Electrical and Computer Engineering at Virginia Commonwealth University.
Virginia Commonwealth University,2017
Major Director: Dr. Hadis Morkoç, Professor, Electrical and Computer Engineering
This thesis focuses on growth of Zn polar BeMgZnO/ZnO heterostructure on GaN/sapphire template with two dimensional electron gas (2DEG) for the application of UV photodetector/emitter and high speed electronics. The motivation of using …
Optical Spectroscopy Of Wide Bandgap Semiconductor Heterostructures And Group-Iv Alloy Quantum Dots, Tanner A. Nakagawara
Optical Spectroscopy Of Wide Bandgap Semiconductor Heterostructures And Group-Iv Alloy Quantum Dots, Tanner A. Nakagawara
Theses and Dissertations
Efficient and robust blue InGaN multiple quantum well (MQW) light emitters have become ubiquitous; however, they still have unattained theoretical potential. It is widely accepted that “localization” of carriers due to indium fluctuations theoretically enhance their efficiency by moderating defect-associated nonradiative recombination. To help develop a complete understanding of localization effects on carrier dynamics, this thesis explores degree of localization in InGaN MQWs and its dependence on well thickness and number of wells, through temperature and power dependent photoluminescence measurements. Additionally, silicon-compatible, nontoxic, colloidally synthesizable 2-5 nm Ge1-xSnx alloy quantum-dots (QDs) are explored for potential visible to …
Low-Temperature Fabrication Process For Integrated High-Aspect Ratio Metal Oxide Nanostructure Semiconductor Gas Sensors, William Paul Clavijo
Low-Temperature Fabrication Process For Integrated High-Aspect Ratio Metal Oxide Nanostructure Semiconductor Gas Sensors, William Paul Clavijo
Theses and Dissertations
This work presents a new low-temperature fabrication process of metal oxide nanostructures that allows high-aspect ratio zinc oxide (ZnO) and titanium dioxide (TiO2) nanowires and nanotubes to be readily integrated with microelectronic devices for sensor applications. This process relies on a new method of forming a close-packed array of self-assembled high-aspect-ratio nanopores in an anodized aluminum oxide (AAO) template in a thin (2.5 µm) aluminum film deposited on a silicon and lithium niobate substrate (LiNbO3). This technique is in sharp contrast to traditional free-standing thick film methods and the use of an integrated thin aluminum film …