Electronic Devices and Semiconductor Manufacturing Commons^™

Strain Controlled Ultra-Low-Energy Magnetic Tunneling Junction, Hasnain Ahmad, Supriyo Bandyopadhyay, Jayasimha Atulasimha

Graduate Research Posters

We are experimenting on designing a voltage-controlled ultra-low-energy Magnetic Tunneling Junction (MTJ) device using a soft single domain magnetostrictive layer (i.e. Galfenol: Fe_1-xGa_x , x = 20 At%) coupled to a piezoelectric layer (i.e. PMN-PT). Special metal pads have been designed using photolithography to generate stress in the PMN-PT layer by applying electric field. The patterns of different shape anisotropic nano-magnets are designed using e-beam lithography and we have successfully fabricate FeGa nanomagnets with only 12 to 13 nanometer thickness by sputter deposition. These nanomagnets have been characterized by magnetic force microscopy for observing their switching capabilities. …