Open Access. Powered by Scholars. Published by Universities.®
Electronic Devices and Semiconductor Manufacturing Commons™
Open Access. Powered by Scholars. Published by Universities.®
- Keyword
-
- BeMgZnO (2)
- GeSn (2)
- InGaN (2)
- Acoustic cavity (1)
- Atomic Layer Deposition and Spectroscopic Ellipsometry (1)
-
- Cathodoluminescence (1)
- Complementary Metal-Oxide-Semiconductor (1)
- Efficiency droop (1)
- Electro-optic/absorption Modulator (1)
- Epitaxial lateral overgrowth (1)
- Epsilon-Near-Zero (1)
- FMR (1)
- GaN (1)
- Heteroepitaxy (1)
- Indium incorporation efficiency (1)
- Integrated Nano Photonics (1)
- Light emitting diode (1)
- Light emitting diodes (1)
- Light-Matter-Interaction (1)
- Localization (1)
- Low Insertion Loss (1)
- Metal-organic chemical vapor deposition (1)
- Mode analysis COMSOL Multiphysics (1)
- Nanomagnetic Logic (1)
- Nanomagnetism (1)
- Nonpolar (1)
- Optical Spectroscopy (1)
- Optical anisotropy (1)
- Photoluminescence (1)
- Plasmonic (1)
Articles 1 - 5 of 5
Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Low Insertion-Loss Nanophotonic Modulators Through Epsilon-Near-Zero Material-Based Plasmon-Assisted Approach For Integrated Photonics, Mohammad Ariful Hoque Sojib
Low Insertion-Loss Nanophotonic Modulators Through Epsilon-Near-Zero Material-Based Plasmon-Assisted Approach For Integrated Photonics, Mohammad Ariful Hoque Sojib
Theses and Dissertations
Electro-optic/absorption Modulators (EOM/EAMs) encode high-frequency electrical signals into optical signals. With the requirement of large packing density, device miniaturization is possible by confining light in a sub-wavelength dimension by utilizing the plasmonic phenomenon. In plasmon, energy gets transferred from light to the form of oscillation of free electrons on a surface of a metal at an interface between the metal and a dielectric. Plasmonic provides increased light-matter interaction (LMI) and thus making the light more sensitive to local refractive index change. Plasmonic-based integrated nanophotonic modulators, despite their promising features, have one key limiting factor of large Insertion Loss (IL) which …
Optical Spectroscopy Of Wide Bandgap Semiconductor Heterostructures And Group-Iv Alloy Quantum Dots, Tanner A. Nakagawara
Optical Spectroscopy Of Wide Bandgap Semiconductor Heterostructures And Group-Iv Alloy Quantum Dots, Tanner A. Nakagawara
Theses and Dissertations
Efficient and robust blue InGaN multiple quantum well (MQW) light emitters have become ubiquitous; however, they still have unattained theoretical potential. It is widely accepted that “localization” of carriers due to indium fluctuations theoretically enhance their efficiency by moderating defect-associated nonradiative recombination. To help develop a complete understanding of localization effects on carrier dynamics, this thesis explores degree of localization in InGaN MQWs and its dependence on well thickness and number of wells, through temperature and power dependent photoluminescence measurements. Additionally, silicon-compatible, nontoxic, colloidally synthesizable 2-5 nm Ge1-xSnx alloy quantum-dots (QDs) are explored for potential visible to …
Optical Investigations Of Ingan Heterostructures And Gesn Nanocrystals For Photonic And Phononic Applications: Light Emitting Diodes And Phonon Cavities, Shopan D. Hafiz
Optical Investigations Of Ingan Heterostructures And Gesn Nanocrystals For Photonic And Phononic Applications: Light Emitting Diodes And Phonon Cavities, Shopan D. Hafiz
Theses and Dissertations
InGaN heterostructures are at the core of blue light emitting diodes (LEDs) which are the basic building blocks for energy efficient and environment friendly modern white light generating sources. Through quantum confinement and electronic band structure tuning on the opposite end of the spectrum, Ge1−xSnx alloys have recently attracted significant interest due to its potential role as a silicon compatible infra-red (IR) optical material for photodetectors and LEDs owing to transition to direct bandgap with increasing Sn. This thesis is dedicated to establishing an understanding of the optical processes and carrier dynamics in InGaN heterostructures for achieving …
Ultra–Low Power Straintronic Nanomagnetic Computing With Saw Waves: An Experimental Study Of Saw Induced Magnetization Switching And Properties Of Magnetic Nanostructures, Vimal G. Sampath
Theses and Dissertations
A recent International Technology Roadmap for Semiconductors (ITRS) report (2.0, 2015 edition) has shown that Moore’s law is unlikely to hold beyond 2028. There is a need for alternate devices to replace CMOS based devices, if further miniaturization and high energy efficiency is desired. The goal of this dissertation is to experimentally demonstrate the feasibility of nanomagnetic memory and logic devices that can be clocked with acoustic waves in an extremely energy efficient manner. While clocking nanomagnetic logic by stressing the magnetostrictive layer of a multiferroic logic element with with an electric field applied across the piezoelectric layer is known …
Beyond Conventional C-Plane Gan-Based Light Emitting Diodes: A Systematic Exploration Of Leds On Semi-Polar Orientations, Morteza Monavarian
Beyond Conventional C-Plane Gan-Based Light Emitting Diodes: A Systematic Exploration Of Leds On Semi-Polar Orientations, Morteza Monavarian
Theses and Dissertations
Despite enormous efforts and investments, the efficiency of InGaN-based green and yellow-green light emitters remains relatively low, and that limits progress in developing full color display, laser diodes, and bright light sources for general lighting. The low efficiency of light emitting devices in the green-to-yellow spectral range, also known as the “Green Gap”, is considered a global concern in the LED industry. The polar c-plane orientation of GaN, which is the mainstay in the LED industry, suffers from polarization-induced separation of electrons and hole wavefunctions (also known as the “quantum confined Stark effect”) and low indium incorporation efficiency that …