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A Study Of Transconductance Degradation In Hemt Using A Self-Consistent Boltzmann-Poisson-Schrodinger Solver, Rahim Khoie
A Study Of Transconductance Degradation In Hemt Using A Self-Consistent Boltzmann-Poisson-Schrodinger Solver, Rahim Khoie
Electrical & Computer Engineering Faculty Research
A self-consistent Boltzmann-Poisson-Schrödinger Solver is used to study the transconductance degradation in high electron mobility transistor (HEMT), which has extensively been reported by both experimental [1]-[8] and computational [9]-[ 13] researchers. As the gate voltage of a HEMT device is increased, its transconductance increases until it reaches a peak value, beyond which, the transconductance is degraded rather sharply with further increase in applied gate bias. We previously reported a two-subband self-consistent Boltzmann-Poisson- Schrödinger Solver for HEMT. [14] We further incorporated an additional self-consistency by calculating field-dependent, energy-dependent intersubband and intrasubband scattering rates due to ionized impurities and polar optical phonons.[15] …
A Self-Consistent Numerical Method For Simulation Of Quantum Transport In High Electron Mobility Transistor; Part 1: The Boltzmann-Poisson-Schrodinger Solver, Rahim Khoie
Electrical & Computer Engineering Faculty Research
A self-consistent Boltzmann-Poisson-Schrödinger solver for High Electron Mobility Transistor is presented. The quantization of electrons in the quantum well normal to the heterojunction is taken into account by solving the two higher moments of Boltzmann equation along with the Schrödinger and Poisson equations, self-consistently. The Boltzmann transport equation in the form of a current continuity equation and an energy balance equation are solved to obtain the transient and steady-state transport behavior. The numerical instability problems associated with the simulator are presented, and the criteria for smooth convergence of the solutions are discussed. The current-voltage characteristics, transconductance, gate capacitance, and unity-gain …
A Self-Consistent Numerical Method For Simulation Of Quantum Transport In High Electron Mobility Transistor; Part Ii: The Full Quantum Transport, Rahim Khoie
Electrical & Computer Engineering Faculty Research
In Part I of this paper we reported a self-consistent Boltzmann-Schrodinger-Poisson simulator for HEMT in which only electrons in the first subband were assumed to be quantized with their motion restricted to 2 dimensions. In that model, the electrons in the second and higher subbands were treated as bulk system behaving as a 3 dimensional electron gas. In Part II of this paper, we extend our simulator to a self-consistent full-quantum model in which the electrons in the second subband are also treated as quantized 2 dimensional gas. In this model, we consider the electrons in the lowest two subbands …