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Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Very-Low-Specific-Resistance Pd/Ag/Au/Ti/Au Alloyed Ohmic Contact To P Gan For High-Current Devices, V. Adivarahan, A. Lunev, M. Asif Khan, J. Yang, Grigory Simin, M. S. Shur, R. Gaska
Very-Low-Specific-Resistance Pd/Ag/Au/Ti/Au Alloyed Ohmic Contact To P Gan For High-Current Devices, V. Adivarahan, A. Lunev, M. Asif Khan, J. Yang, Grigory Simin, M. S. Shur, R. Gaska
Grigory Simin
We report on Pd/Ag/Au/Ti/Au alloyed metallic contact to pGaN. An 800 °C anneal for 1 min in flowing nitrogen ambient produces an excellent ohmic contact with a specific contact resistivity close to 1×10−6 Ω cm2 and with good stability under high current operation conditions. This high-temperature anneal forms an alloy between Ag,Au, and pGaN resulting in a highly p-doped region at the interface. Using x-ray photoelectron spectroscopy and x-ray diffractionanalysis, we confirm that the contact formation mechanism is the metal intermixing and alloying with the semiconductor.
Algan/Gan Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors On Sic Substrates, M. Asif Khan, X. Hu, A. Tarakji, Grigory Simin, J. Yang, R. Gaska, M. S. Shur
Algan/Gan Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors On Sic Substrates, M. Asif Khan, X. Hu, A. Tarakji, Grigory Simin, J. Yang, R. Gaska, M. S. Shur
Grigory Simin
We report on AlGaN/GaN metal–oxide–semiconductor heterostructurefield-effect transistors (MOS-HFETs) grown over insulating 4H–SiC substrates. We demonstrate that the dc and microwave performance of the MOS-HFETs is superior to that of conventional AlGaN/GaN HFETs, which points to the high quality of SiO2/AlGaNheterointerface. The MOS-HFETs could operate at positive gate biases as high as +10 V that doubles the channel current as compared to conventional AlGaN/GaN HFETs of a similar design. The gate leakage current was more than six orders of magnitude smaller than that for the conventional AlGaN/GaN HFETs. The MOS-HFETs exhibited stable operation at elevated temperatures up to 300 °Cwith excellent …
Simulation Of Gallium Arsenide Electroluminescence Spectra In Avalanche Breakdown Using Self-Absorption And Recombination Models, David Kerns, Sherra Kerns, M Lahbabi, A Ahaitouf, E Abarkan, M Fliyou, A Hoffmann, J Charles, Bharat Bhuva
Simulation Of Gallium Arsenide Electroluminescence Spectra In Avalanche Breakdown Using Self-Absorption And Recombination Models, David Kerns, Sherra Kerns, M Lahbabi, A Ahaitouf, E Abarkan, M Fliyou, A Hoffmann, J Charles, Bharat Bhuva
Sherra E. Kerns
Light emission from gallium arsenide (GaAs) p–n junctions biased in avalanche breakdown have been modeled over the range of 1.4–3.4 eV. The model emphasizes direct and indirect recombination processes and bulk self-absorption. Comparisons between measured and simulated spectra for sample junctions from custom and commercially fabricated GaAs devices demonstrate that the model is simple, accurate, and consistent with fundamental physical device theory. The model also predicts the junction depth with accuracy.
Simulation Of Gallium Arsenide Electroluminescence Spectra In Avalanche Breakdown Using Self-Absorption And Recombination Models, David Kerns, Sherra Kerns, M Lahbabi, A Ahaitouf, E Abarkan, M Fliyou, A Hoffmann, J Charles, Bharat Bhuva
Simulation Of Gallium Arsenide Electroluminescence Spectra In Avalanche Breakdown Using Self-Absorption And Recombination Models, David Kerns, Sherra Kerns, M Lahbabi, A Ahaitouf, E Abarkan, M Fliyou, A Hoffmann, J Charles, Bharat Bhuva
David V. Kerns
Light emission from gallium arsenide (GaAs) p–n junctions biased in avalanche breakdown have been modeled over the range of 1.4–3.4 eV. The model emphasizes direct and indirect recombination processes and bulk self-absorption. Comparisons between measured and simulated spectra for sample junctions from custom and commercially fabricated GaAs devices demonstrate that the model is simple, accurate, and consistent with fundamental physical device theory. The model also predicts the junction depth with accuracy.