Electronic Devices and Semiconductor Manufacturing Commons^™

1+N Network Protection For Mesh Networks: Network Coding-Based Protection Using P-Cycles And Protection Paths, Ahmed Kamal, Aditya Ramamoorthy

Ahmed Kamal

A method and system for providing protection of multiple communication sessions using the bandwidth resources on the order of those required to protect a single communication session. This is facilitated through the use of network coding on a protection cycle. Transmissions from all connections are coded together using network coding and transmitted in two different directions on a cycle, so that the signal can be recovered by the receiver in two ways: on the working path, and on the protection (cycle) path.

New Flexible Channels For Room Temperature Tunneling Field Effect Transistors, Boyi Hao, Anjana Asthana, Paniz K. Hazaveh, Paul L. Bergstrom, Douglas Banyai, Madhusudan A. Savaikar, John A. Jaszczak, Yoke Khin Yap

John Jaszczak

No abstract provided.

X-Ray Photoemission Analysis Of Chemically Treated Gate Semiconductor Surfaces For Radiation Detector Applications, A. J. Nelson, A. M. Conway, B. W. Sturm, E. M. Behymer, C. E. Reinhardt, R. J. Nikolic, S. A. Payne, G. Pabst, K. C. Mandal

Krishna C. Mandal

No abstract provided.

Highly Sensitive X-Ray Detectors In The Low-Energy Range On N-Type 4h-Sic Epitaxial Layers, K. C. Mandal, P. G. Muzykov, J. R. Terry

Krishna C. Mandal

No abstract provided.

Evidence For Amphoteric Behavior Of Ru On Cdte Surfaces, D. N. Bose, S. Basu, K. C. Mandal, D. Mazumdar

Krishna C. Mandal

No abstract provided.

Evidence For Amphoteric Behavior Of Ru On Cdte Surfaces, D. N. Bose, S. Basu, K. C. Mandal, D. Mazumdar

Krishna C. Mandal

No abstract provided.

X-Ray Photoemission Analysis Of Chemically Treated Gate Semiconductor Surfaces For Radiation Detector Applications, A. J. Nelson, A. M. Conway, B. W. Sturm, E. M. Behymer, C. E. Reinhardt, R. J. Nikolic, S. A. Payne, G. Pabst, K. C. Mandal

Krishna C. Mandal

No abstract provided.

Novel Chemical Preparative Route For Semiconducting Mose2 Thin Films, K. C. Mandal, O. Savadogo

Krishna C. Mandal

No abstract provided.

Evidence For Amphoteric Behavior Of Ru On Cdte Surfaces, D. N. Bose, S. Basu, K. C. Mandal, D. Mazumdar

Krishna C. Mandal

No abstract provided.

Ferroelectric Batio3/Srtio3 Multilayered Thin Films For Room-Temperature Tunable Microwave Elements, Ming Liu, Chunrui Ma, Gregory Collins, Jian Liu, Chonglin Chen, Andy D. Alemayehu, Guru Subramanyam, Ying Ding, Jianghua Chen, Chao Dai, Yuan Lin, Melanie W. Cole

Guru Subramanyam

Ferroelectric BaTiO3/SrTiO3 with optimized c-axis-oriented multilayered thin films were epitaxially fabricated on (001) MgO substrates. The microstructural studies indicate that the in-plane interface relationships between the films as well as the substrate are determined to be (001)SrTiO3//(001)BaTiO3//(001)MgO and [100]SrTiO3//[100]BaTiO3//[100]MgO. The microwave (5 to 18 GHz) dielectric measurements reveal that the multilayered thin films have excellent dielectric properties with large dielectric constant, low dielectric loss, and high dielectric tunability, which suggests that the as-grown ferroelectric multilayered thin films can be developed for room-temperature tunable microwave elements and related device applications.

A Reconfigurable Cpw Bow-Tie Antenna Using An Integrated Ferroelectric Thin Film Varactor, K. C. Pan, Dustin Brown, Guru Subramanyam, R. Penno, H. Jiang, C. H. Zhang, M. Patterson, David Kuhl, Kevin Leedy, Charles Cerny

Guru Subramanyam

A novel printed antenna with a frequency reconfigurable feed network is presented. The antenna consists of a bowtie structure patch radiating element in the inner space of an annulus that is on a nongrounded substrate with a ferroelectric (FE) Barium Strontium Titanate (BST) thin film. The bowtie patch is fed by a coplanar waveguide (CPW) transmission line that also includes a CPW-based BST shunt varactor. Reconfiguration of the compact 8 mm × 8 mm system has been demonstrated by shifting the antenna system’s operating frequency 500 MHz in the 7–9 GHz band by applying a DC voltage bias.

Very-Low-Specific-Resistance Pd/Ag/Au/Ti/Au Alloyed Ohmic Contact To P Gan For High-Current Devices, V. Adivarahan, A. Lunev, M. Asif Khan, J. Yang, Grigory Simin, M. S. Shur, R. Gaska

Grigory Simin

We report on Pd/Ag/Au/Ti/Au alloyed metallic contact to pGaN. An 800 °C anneal for 1 min in flowing nitrogen ambient produces an excellent ohmic contact with a specific contact resistivity close to 1×10−6 Ω cm2 and with good stability under high current operation conditions. This high-temperature anneal forms an alloy between Ag,Au, and pGaN resulting in a highly p-doped region at the interface. Using x-ray photoelectron spectroscopy and x-ray diffractionanalysis, we confirm that the contact formation mechanism is the metal intermixing and alloying with the semiconductor.

Algan/Gan Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors On Sic Substrates, M. Asif Khan, X. Hu, A. Tarakji, Grigory Simin, J. Yang, R. Gaska, M. S. Shur

Grigory Simin

We report on AlGaN/GaN metal–oxide–semiconductor heterostructurefield-effect transistors (MOS-HFETs) grown over insulating 4H–SiC substrates. We demonstrate that the dc and microwave performance of the MOS-HFETs is superior to that of conventional AlGaN/GaN HFETs, which points to the high quality of SiO2/AlGaNheterointerface. The MOS-HFETs could operate at positive gate biases as high as +10 V that doubles the channel current as compared to conventional AlGaN/GaN HFETs of a similar design. The gate leakage current was more than six orders of magnitude smaller than that for the conventional AlGaN/GaN HFETs. The MOS-HFETs exhibited stable operation at elevated temperatures up to 300 °Cwith excellent …

Mechanism Of Radio-Frequency Current Collapse In Gan-Algan Field-Effect Transistors, A. Tarakji, Grigory Simin, N. Ilinskaya, X. Hu, A. Kumar, A. Koudymov, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska

Grigory Simin

The mechanism of radio-frequency current collapse in GaN–AlGaN heterojunctionfield-effect transistors(HFETs) was investigated using a comparative study of HFET and metal–oxide–semiconductor HFET current–voltage (I–V) and transfer characteristics under dc and short-pulsed voltage biasing. Significant current collapse occurs when the gate voltage is pulsed, whereas under drain pulsing the I–V curves are close to those in steady-state conditions. Contrary to previous reports, we conclude that the transverse electric field across the wide-band-gap barrier layer separating the gate and the channel rather than the gate or surface leakage currents or high-field effects in the gate–drain spacing is responsible for the current collapse. We …

Variable Attenuator Blends Dynamic Range, Linearity, Chin-Leong Lim

Chin-Leong Lim

A voltage variable attenuators (VVA) with compact dimensions and high linearity can be realized by connecting PIN diodes in the form of a π network. However this VVA's maximum frequency is limited to ~1 GHz because of signal leakage through the series diodes' parasitic capacitances. The ceiling frequency can significantly raised by resonating the parasitic capacitance with a parallel inductor. This technique has been previously demonstrated on a discrete design. To reduce component count and size, this work extends the technique to a standalone, highly-integrated module. This paper reports the performances achieved at 3.5 GHz.

The prototype's attenuation is adjustable …

Challenges And Opportunities For Multi-Functional Oxide Thin Films For Voltage Tunable Radio-Frequency/Microwave Components, Guru Subramanyam, M W. Cole, Nian X. Sun, Thottam S. Kalkur, Nick M. Sbrockey, Gary S. Tompa, Xiaomei Guo, Chonglin Chen, S P. Alpay, G A. Rossetti Jr., Kaushik Dayal, Long-Qing Chen, Darrell G. Schlom

Guru Subramanyam

There has been significant progress on the fundamental science and technological applications of complex oxides and multiferroics. Among complex oxide thin films, barium strontium titanate (BST) has become the material of choice for room-temperature-based voltage-tunable dielectric thin films, due to its large dielectric tunability and low microwave loss at room temperature. BST thin film varactor technology based reconfigurable radio frequency (RF)/microwave components have been demonstrated with the potential to lower the size, weight, and power needs of a future generation of communication and radar systems. Low-power multiferroic devices have also been recently demonstrated. Strong magneto-electric coupling has also been demonstrated …

Limiters Protect Adcs Without Adding Harmonics, Chin-Leong Lim

Chin-Leong Lim

High-speed Analogue to Digital Converters (ADC) are used for sampling at either the intermediate frequency (IF) or the radio frequency of wireless receivers. When the transmitter is nearby, the sampled signal can exceed the ADC’s maximum input level. So, amplitude limiting is necessary to prevent ADC damage or degradation. While automatic gain control is effective for controlling IF amplitude excursion in traditional single-carrier systems, it is not desirable in modern multi-carrier applications. One solution is to cap the IF amplitude excursion with a limiter. Unfortunately, a new problem is created – the strong non-linearity that is required of a good …

Lna Integrates Fast Shutdown Function, Chin-Leong Lim

Chin-Leong Lim

To minimize dead time in time domain duplex (TDD) transceiver, reception should ideally commence as soon as transmission ends. However, the low noise amplifier (LNA), which is typically shutdown during transmission to prevent device damage and receiver overload, can exhibit a turn-on delay. In older implementations, the shutdown function is external to the LNA device. So, one way to reduce part count and to miniaturize this class of LNA is to integrate the LNA and shutdown function in a microwave monolithic integrated circuit (MMIC). The integration also allows the shutdown circuit to be connected to the LNA at an optimum …

Low Loss Configuration For Integrated Pin-Schottky Limiters, Chin-Leong Lim

Chin-Leong Lim

Compared to the PIN diode limiter, the Schottky-PIN limiter improves receiver protection, but has a higher insertion loss. Low cost, plastic packaged diodes can further worsen the loss. Diode stacking, mesa diode construction, and isolating the Schottky diode with a high-impedance quarter wave line or a directional coupler can reduce loss, but detrimentally raises the limiting threshold and/or adds bulk or cost. The PIN-Schottky limiter’s insertion loss can be improved by integrating the diodes’ parasitic capacitances into a low pass ladder network, but this solution requires the PIN diode to have two anode connections. Recently, the PIN-Schottky limiter was integrated …

Active Neutral Point Clamped Converter For Equal Loss Distribution, Saad Mekhilef

Prof. Dr. Saad Mekhilef

No abstract provided.

Limiting And Transient Performances Of A Low Loss Pin-Schottky Limiter, Chin-Leong Lim

Chin-Leong Lim

The main cause of loss in the PIN-Schottky limiter is the diodes’ parasitic capacitances. Techniques to counter the parasitic capacitances include using bare chip, air cavity packaging, diode stacking, mesa construction, isolating the Schottky diode from the signal path and connecting the diodes to a low impedance node. But the aforementioned techniques either sacrifice cost, manufacturability, size, performances or thermal ruggedness. To reduce loss in the PIN-Schottky limiter, we re-configured its parasitics into a low pass ladder network. This paper reports on the new configuration’s changed large signal and transient performances. We observed improved isolation at 0.9 and 2.4 GHz, …

Experimental And Theoretical Study Of Polarization-Dependent Optical Transitions In Inas Quantum Dots At Telecommunication-Wavelengths (1300-1500 Nm), Muhammad Usman, Susannah Heck, Edmund Clarke, Peter Spencer, Hoon Ryu, Ray Murray, Gerhard Klimeck

Gerhard Klimeck

observed, in contrast to recent reports for single QDJOURNAL OF APPLIED PHYSICS 109, 104510 (2011)The design of some optical devices, such as semiconductor optical amplifiers for telecommunication applications, requires polarization-insensitive optical emission at long wavelengths (1300–1550 nm). Self-assembled InAs/GaAs quantum dots (QDs) typically exhibit ground state optical emissions at wavelengths shorter than 1300 nm with highly polarization-sensitive characteristics, although this can be modified by the use of low growth rates, the incorporation of strain-reducing capping layers, or the growth of closely-stacked QD layers. Exploiting the strain interactions between closely stacked QD layers also affords greater freedom in the choice of …

Balanced Uhf Lna Simplifies Cell Towers, Chin-Leong Lim

Chin-Leong Lim

Cellular basestations' low noise amplifiers (LNA) must have input impedances that are closely matched to the antennas. Unfortunately, the amplifier devices cannot be conjugate matched without sacrificing their noise performances. Current solutions such as the isolator and the balanced LNA can satisfactorily solve the matching problem but at the expense of increased cost, weight and size. On the other hand, the confined space atop cellular towers makes the current solutions unattractive. To shrink the balanced LNA for cellular infrastructure service, we pair a highly integrated dual-amplifier MMIC with miniature multilayer couplers. This MMIC also achieves the distinction of being the …

Mems Resonant Magnetic Field Sensor Based On An Aln/Fegab Bilayer Nano-Plate Resonator, Yu Hui, Tianxiang Nan, Nian Sun, Matteo Rinaldi

Nian X. Sun

This paper reports on the first demonstration of an ultra-miniaturized, high frequency (215 MHz) and high sensitivity MEMS resonant magnetic field sensor based on an AlN/FeGaB bilayer nano-plate resonator capable of detecting magnetic field at nano-Tesla level. Despite of the reduced volume and the high operating frequency of the sensor, high electromechanical performances were achieved (quality factor Q ≈ 511 and electromechanical coupling coefficient kt² ≈ 1.63%). This first prototype was characterized for different magnetic field levels from 0 to 152 Oe showing a frequency sensitivity of ~ 1 Hz/nT and a limit of detection of ~ 10 nT.

Wireless Transmission Network : A Imagine, Radhey Shyam Meena Engineer, Neeraj Kumar Garg Asst.Prof

Radhey Shyam Meena

World cannot be imagined without electrical power. Generally the power is transmitted through transmission networks. This paper describes an original idea to eradicate the hazardous usage of electrical wires which involve lot of confusion in particularly organizing them. Imagine a future in which wireless power transfer is feasible: cell phones, household robots, mp3 players, laptop computers and other portable electronic devices capable of charging themselves without ever being plugged in freeing us from that final ubiquitous power wire. This paper includes the techniques of transmitting power without using wires with an efficiency of about 95% with non-radioactivemethods. In this paper …

Battery Energy Storage System In Solar Power Generation, Radhey Shyam Meena Er., Deepa Sharma

Radhey Shyam Meena

Grid-connected solar PV dramatically changes the load profile of an electric utility customer. The expected widespread adoption of solar generation by customers on the distribution system poses significant challenges to system operators both in transient and steady state operation, from issues including voltage swings, sudden weather-induced changes in generation, and legacy protective devices designed with one-way power flow in mind

Balanced Amplifier Aims For Low Noise, Chin-Leong Lim

Chin-Leong Lim

Cellular basestations' low noise amplifiers (LNA) must have input impedances that are closely matched to the antennas. Unfortunately, the amplifier devices cannot be conjugate matched without sacrificing their noise performances. Current solutions such as the isolator and the balanced LNA can satisfactorily solve the matching problem but at the expense of increased cost, weight and size. On the other hand, the confined space atop cellular towers makes the current solutions unattractive. To shrink the balanced LNA for cellular infrastructure service, we pair a highly integrated dual-amplifier MMIC with miniature multilayer couplers. This MMIC also has the distinction of being the …

Low Mismatch Uhf Lna For Cellular Infrastructure, Chin-Leong Lim

Chin-Leong Lim

Cellular basestations' low noise amplifiers (LNA) must have input impedances that are closely matched to the antennas. Unfortunately, the amplifier devices cannot be conjugate matched without sacrificing their noise performances. Current solutions such as the isolator and the balanced LNA can satisfactorily solve the matching problem but at the expense of increased cost, weight and size. On the other hand, the confined space atop cellular towers makes the current solutions unattractive. To shrink the balanced LNA for cellular infrastructure service, we pair a highly integrated dual-amplifier MMIC with miniature multilayer couplers. This MMIC also achieves the distinction of being the …

Ultra-Fast And High Resolution Nems Thermal Detector Based On A Nano-Air-Gap Piezoelectric Resonant Structure, Yu Hui, Matteo Rinaldi

Matteo Rinaldi

This paper presents the theoretical modeling and experimental verification of an innovative Nano Electro Mechanical System (NEMS) technology suitable for the implementation of ultra-fast and high resolution un-cooled thermal detectors. Fundamental challenges associated to the implementation of mechanically resonant thermal detectors are overcome with the introduction of an innovative technology platform in which a temperature sensitive Aluminum Nitride (AlN) nano-plate resonator and a monolithically integrated micromachined suspended heat absorbing element are perfectly overlapped but separated by a sub-micron air gap. By placing the absorbing element outside the body of the resonator (but suspended over it) the electromechanical performance of the …

Ultra-Thin-Film Aln Contour-Mode Resonators For Sensing Applications, Matteo Rinaldi, Chiara Zuniga, Gianluca Piazza

Matteo Rinaldi

This paper reports on the design and experimental verification of a new class of ultra-thin-film (250 nm) aluminum nitride (AlN) microelectromechanical system (MEMS) contour mode resonators (CMRs) suitable for the fabrication of ultra-sensitive gravimetric sensors. The device thickness was opportunely scaled in order to increase the mass sensitivity, while keeping a constant frequency of operation. In this first demonstration the resonance frequency of the device was set to 178 MHz and a mass sensitivity as high as 38.96 KHz⋅μm2/fg was attained. This device demonstrates the unique capability of the CMR-S technology to decouple resonance frequency from mass sensitivity.