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Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Fabrication Of Black Phosphorus Terahertz Photoconductive Antennas, Nathan Tanner Sawyers
Fabrication Of Black Phosphorus Terahertz Photoconductive Antennas, Nathan Tanner Sawyers
Physics Undergraduate Honors Theses
Terahertz (THz) photoconductive antennas (PCAs) using 40nm thin-film flakes of black phosphorus (BP) and hexagonal boron nitride (hBN) have been shown computationally to be capable of THz emission comparable to those based on GaAs [2]. In this paper, I briefly describe the scientific and practical interest in THz emissions and explain what warrants research into black phosphorus as a photoconductive semiconductor in THz devices. Furthermore, I outline the basic principle of how these antennas work and mention alternative designs produced by other researchers in the past. Finally, I summarize the fabrication process of these antennas, as well as the measurements …
Gate-Controlled Quantum Dots In Two-Dimensional Tungsten Diselenide And One-Dimensional Tellurium Nanowires, Shiva Davari Dolatabadi
Gate-Controlled Quantum Dots In Two-Dimensional Tungsten Diselenide And One-Dimensional Tellurium Nanowires, Shiva Davari Dolatabadi
Graduate Theses and Dissertations
This work focuses on the investigation of gate-defined quantum dots in two-dimensional transition metal dichalcogenide tungsten diselenide (WSe2) as a means to unravel mesoscopic physical phenomena such as valley-contrasting physics in WSe2 flakes and its potential application as qubit, as well as realizing gate-controlled quantum dots based on elementaltellurium nanostructures which may unlock the topological nature of the host material carriers such as Weyl states in tellurium nanowires.The fabrication and characterization of gate-defined hole quantum dots in monolayer and bilayer WSe2 are reported. The gate electrodes in the device design are located above and below the WSe2 nanoflakes to accumulate …
Design And Characterization Of Standard Cell Library Using Finfets, Phanindra Datta Sadhu
Design And Characterization Of Standard Cell Library Using Finfets, Phanindra Datta Sadhu
Master's Theses
The processors and digital circuits designed today contain billions of transistors on a small piece of silicon. As devices are becoming smaller, slimmer, faster, and more efficient, the transistors also have to keep up with the demands and needs of the daily user. Unfortunately, the CMOS technology has reached its limit and cannot be used to scale down due to the transistor's breakdown caused by short channel effects. An alternative solution to this is the FinFET transistor technology, where the gate of the transistor is a three dimensional fin that surrounds the transistor and prevents the breakdown caused by scaling …
Quantum Mechanical Calculations Of Monoxides Of Silicon Carbide Molecules, John W. Roberts Jr.
Quantum Mechanical Calculations Of Monoxides Of Silicon Carbide Molecules, John W. Roberts Jr.
Theses and Dissertations
Modern semiconductor devices are principally made using the element silicon. In recent years, silicon carbide (SiC), with its wide band-gap, high thermal conductivity, and radiation resistance, has shown prospects as a semiconductor material for use in high temperature and radiation environments such as jet engines and satellites. A limiting factor in the performance of many SiC semiconductor components is the presence of lattice defects formed at oxide dielectric junctions during processing. Recent theoretical work has used small quantum mechanical systems embedded in larger molecular mechanics structures to attempt to better understand SiC surfaces and bulk materials and their oxidation. This …
Temporal Development Of Electric Field Structures In Photoconductive Gaas Switches, K. H. Schoenbach, J. S. Kenney, F.E. Peterkin, R. J. Allen
Temporal Development Of Electric Field Structures In Photoconductive Gaas Switches, K. H. Schoenbach, J. S. Kenney, F.E. Peterkin, R. J. Allen
Bioelectrics Publications
The temporal development of the electric field distribution in semi‐insulating GaAs photoconductive switches operated in the linear and lock‐on mode has been studied. The field structure was obtained by recording a change in the absorption pattern of the switch due to the Franz–Keldysh effect at a wavelength near the band edge of GaAs. In the linear mode, a high field layer develops at the cathode contact after laser activation. With increasing applied voltage, domainlike structures become visible in the anode region and the switch transits into the lock‐on state, a permanent filamentary electrical discharge. Calibration measurements show the field intensity …