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Electronic Devices and Semiconductor Manufacturing Commons™
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Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Interfacial Contact With Noble Metal - Noble Metal And Noble Metal - 2d Semiconductor Nanostructures Enhance Optical Activity, Ricardo Raphael Lopez Romo
Interfacial Contact With Noble Metal - Noble Metal And Noble Metal - 2d Semiconductor Nanostructures Enhance Optical Activity, Ricardo Raphael Lopez Romo
Graduate Theses and Dissertations
Noble metal nanoparticles and two-dimensional (2D) transition metal dichalcogenide (TMD) crystals offer unique optical and electronic properties that include strong exciton binding, spin-orbital coupling, and localized surface plasmon resonance. Controlling these properties at high spatiotemporal resolution can support emerging optoelectronic coupling and enhanced optical features. Excitation dynamics of these optical properties on physicochemically bonded mono- and few-layer TMD crystals with metal nanocrystals and two overlapping spherical metal nanocrystals were examined by concurrently (i) DDA simulations and (ii) far-field optical transmission UV-vis spectroscopic measurements. Initially, a novel and scalable method to unsettle van der Waals bonds in bulk TMDs to prepare …
Electrical Characterization Of Irradiated Semiconducting Amorphous Hydrogenated Boron Carbide, George Glen Peterson
Electrical Characterization Of Irradiated Semiconducting Amorphous Hydrogenated Boron Carbide, George Glen Peterson
Department of Mechanical and Materials Engineering: Dissertations, Theses, and Student Research
Semiconducting amorphous partially dehydrogenated boron carbide has been explored as a neutron voltaic for operation in radiation harsh environments, such as on deep space satellites/probes. A neutron voltaic device could also be used as a solid state neutron radiation detector to provide immediate alerts for radiation workers/students, as opposed to the passive dosimetry badges utilized today. Understanding how the irradiation environment effects the electrical properties of semiconducting amorphous partially dehydrogenated boron carbide is important to predicting the stability of these devices in operation. p-n heterojunction diodes were formed from the synthesis of semiconducting amorphous partially dehydrogenated boron carbide on silicon …