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Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Performance Of Pld Grown Zno Thin Film As A Thin Film Transistor, Shahidul Asif
Performance Of Pld Grown Zno Thin Film As A Thin Film Transistor, Shahidul Asif
MSU Graduate Theses
The performance of ZnO thin film (grown in different parameters) as a thin film transistor (TFT) is the focus of this study. ZnO is renowned for being n-type semiconductor naturally which was utilized in fabricating a thin film transistor here. This thesis is compared the performance of ZnO thin film transistor by growing the thin film using pulsed laser deposition (PLD) on two slightly different substrates at different temperatures in an optimal 0.1 milli bar oxygen pressure which was later analyzed using other material characterization methods. The substrates were both Si (100) but had different resistivity due to different amount …
Stm Study Of Pulsed Laser Assisted Growth Of Ge Quantum Dot On Si(1 0 0)-(2 × 1), Ali Orguz Er, Hani E. Elsayed-Ali
Stm Study Of Pulsed Laser Assisted Growth Of Ge Quantum Dot On Si(1 0 0)-(2 × 1), Ali Orguz Er, Hani E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
Ge quantum dot formation on Si(1 0 0)-(2 × 1) by nanosecond pulsed laser deposition under laser excitation was investigated. Scanning tunneling microscopy was used to probe the growth mode and morphology. Excitation was performed during deposition using laser energy density of 25-100 mJ/cm 2. Faceted islands were achieved at a substrate temperature of ∼250 °C only when using laser excitation. The island morphology changes with increased laser excitation energy density although the faceting of the individual islands remains the same. The size of the major length of islands increases with the excitation laser energy density. A purely electronic …
Self-Assembly Of Ge Quantum Dots On Si(100)- 2×1 By Pulsed Laser Deposition, M. S. Hegazy, H. E. Elsayed-Ali
Self-Assembly Of Ge Quantum Dots On Si(100)- 2×1 By Pulsed Laser Deposition, M. S. Hegazy, H. E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
Self-assembled Ge quantum dots are grown on Si(100)- 2×1 by pulsed laser deposition. The growth is studied by in situ reflection high-energy electron diffraction and postdeposition atomic force microscopy. After the completion of the wetting layer, transient hut clusters, faceted by different planes, are observed. When the height of these clusters exceeded a certain value, the facets developed into {305} planes. Some of these huts become {305}-faceted pyramids as the film mean thickness was increased. With further thickness increase, dome clusters developed on the expense of these pyramids. © 2005 American Institute of Physics. [DOI: 10.1063/1.1949285]