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Full-Text Articles in Electronic Devices and Semiconductor Manufacturing

Carrier Transport Engineering In Wide Bandgap Semiconductors For Photonic And Memory Device Applications, Ravi Teja Velpula Dec 2022

Carrier Transport Engineering In Wide Bandgap Semiconductors For Photonic And Memory Device Applications, Ravi Teja Velpula

Dissertations

Wide bandgap (WBG) semiconductors play a crucial role in the current solid-state lighting technology. The AlGaN compound semiconductor is widely used for ultraviolet (UV) light-emitting diodes (LEDs), however, the efficiency of these LEDs is largely in a single-digit percentage range due to several factors. Until recently, AlInN alloy has been relatively unexplored, though it holds potential for light-emitters operating in the visible and UV regions. In this dissertation, the first axial AlInN core-shell nanowire UV LEDs operating in the UV-A and UV-B regions with an internal quantum efficiency (IQE) of 52% are demonstrated. Moreover, the light extraction efficiency of this …


Gate-Controlled Quantum Dots In Two-Dimensional Tungsten Diselenide And One-Dimensional Tellurium Nanowires, Shiva Davari Dolatabadi Dec 2022

Gate-Controlled Quantum Dots In Two-Dimensional Tungsten Diselenide And One-Dimensional Tellurium Nanowires, Shiva Davari Dolatabadi

Graduate Theses and Dissertations

This work focuses on the investigation of gate-defined quantum dots in two-dimensional transition metal dichalcogenide tungsten diselenide (WSe2) as a means to unravel mesoscopic physical phenomena such as valley-contrasting physics in WSe2 flakes and its potential application as qubit, as well as realizing gate-controlled quantum dots based on elementaltellurium nanostructures which may unlock the topological nature of the host material carriers such as Weyl states in tellurium nanowires.The fabrication and characterization of gate-defined hole quantum dots in monolayer and bilayer WSe2 are reported. The gate electrodes in the device design are located above and below the WSe2 nanoflakes to accumulate …


Raman Scattering Measurements And Analyses Of Gan Thin Films Grown On Zno Substrates By Metalorganic Chemical Vapor Deposition, Zane Mcdaniel, Zhe Chuan Feng, Kevin Stokes Nov 2022

Raman Scattering Measurements And Analyses Of Gan Thin Films Grown On Zno Substrates By Metalorganic Chemical Vapor Deposition, Zane Mcdaniel, Zhe Chuan Feng, Kevin Stokes

Symposium of Student Scholars

Metalorganic chemical vapor deposition (MOCVD) is a popularly used method of growing thin films of GaN on ZnO (GZ) substrates, which pair well due to their structural and characteristic similarities. In this research, optical characterization of the surface quality of GZ sample films is measured by analyzing Raman scattering (RS) using a Renishaw inVia spectrometer fitted with a 532nm laser. Samples were grown in an improved double injection block rotating disc reactor. Multiple samples' spectra show broad peaks that correspond with the E2 (high) and A1 (LO) branches of GaN, and nicely fitted curves are observed for the characteristic E2 …


Transition-Metal Ions In Β-Ga2O3 Crystals: Identification Of Ni Acceptors, Timothy D. Gustafson, Nancy C. Giles, Brian C. Holloway, J. Jesenovec, B. L. Dutton, M. D. Mccluskey, Larry E. Halliburton Nov 2022

Transition-Metal Ions In Β-Ga2O3 Crystals: Identification Of Ni Acceptors, Timothy D. Gustafson, Nancy C. Giles, Brian C. Holloway, J. Jesenovec, B. L. Dutton, M. D. Mccluskey, Larry E. Halliburton

Faculty Publications

Excerpt: Transition-metal ions (Ni, Cu, and Zn) in β-Ga2O3 crystals form deep acceptor levels in the lower half of the bandgap. In the present study, we characterize the Ni acceptors in a Czochralski-grown crystal and find that their (0/−) level is approximately 1.40 eV above the maximum of the valence band.


Sers Platform For Single Fiber Endoscopic Probes, Debsmita Biswas Nov 2022

Sers Platform For Single Fiber Endoscopic Probes, Debsmita Biswas

LSU Doctoral Dissertations

Molecular detection techniques have huge potential in clinical environments. In addition to many other molecular detection techniques, endoscopic Raman spectroscopy has great ability in terms of minimal invasiveness and real-time spectra acquisition. However, Raman Effect is low in sensitivity, limiting the application. Surface-Enhanced Raman Scattering (SERS), addresses this limitation. SERS brings rough nano-metallic surfaces in contact with specimen molecules which enormously enhances Raman signals. This provides Raman spectroscopy with immense capabilities for diverse fields of applications.

Generally, in clinical probe applications, the spectrometer is brought near the target molecules for detection. Typically, optical fibers are used to couple spectrometers to …


Characterization Of Electrophoretic Deposited Zinc Oxide Nanopartices For The Fabrication Of Next-Generation Nanoscale Electronic Applications, Fawwaz Abduh A. Hazzazi Jul 2022

Characterization Of Electrophoretic Deposited Zinc Oxide Nanopartices For The Fabrication Of Next-Generation Nanoscale Electronic Applications, Fawwaz Abduh A. Hazzazi

LSU Doctoral Dissertations

Several reports state that it is crucial to analyze nanoscale semiconductor materials and devices with potential benefits to meet the need for next-generation nanoelectronics, bio, and nanosensors. The progress in the electronics field is as significant now, with modern technology constantly evolving and a greater focus on more efficient robust optoelectronic applications. This dissertation focuses on the study and examination of the practicality of Electrophoretic Deposition (EPD) of zinc oxide (ZnO) nanoparticles (NPs) for use in semiconductor applications.

The feasibility of several synthesized electrolytes, with and without surfactants and APTES surface functionalization, is discussed. The primary objective of this study …


Noncontact Liquid Crystalline Broadband Optoacoustic Sensors, Hengky Chandrahalim, Michael T. Dela Cruz Jun 2022

Noncontact Liquid Crystalline Broadband Optoacoustic Sensors, Hengky Chandrahalim, Michael T. Dela Cruz

AFIT Patents

An optoacoustic sensor includes a liquid crystal (LC) cell formed between top and bottom plates of transparent material. A transverse grating formed across the LC cell that forms an optical transmission bandgap. A CL is aligned to form a spring-like, tunable Bragg grating that is naturally responsive to external agitations providing a spectral transition regime, or edge, in the optical transmission bandgap of the transverse grating that respond to broadband acoustic waves. The optoacoustic sensor includes a narrowband light source that is oriented to transmit light through the top plate, the LC cell, and the bottom plate. The optoacoustic sensor …


Hinged Temperature-Immune Self-Referencing Fabry–Pérot Cavity Sensors, Jeremiah C. Williams, Hengky Chandrahalim May 2022

Hinged Temperature-Immune Self-Referencing Fabry–Pérot Cavity Sensors, Jeremiah C. Williams, Hengky Chandrahalim

AFIT Patents

A passive microscopic Fabry-Pérot Interferometer (FPI) sensor includes a three-dimensional microscopic optical structure formed on a cleaved tip of the optical fighter using a two-photon polymerization process on a photosensitive polymer by a three-dimensional micromachining device. The three-dimensional microscopic optical structure having a hinged optical layer pivotally connected to a distal portion of a suspended structure. A reflective layer is deposited on a mirror surface of the hinged optical layer while in an open position. The hinged optical layer is subsequently positioned in the closed position to align the mirror surface to at least partially reflect a light signal back …


Design & Analysis Of Mixed-Mode Integrated Circuit For Pulse-Shape Discrimination, Bryan Orabutt May 2022

Design & Analysis Of Mixed-Mode Integrated Circuit For Pulse-Shape Discrimination, Bryan Orabutt

McKelvey School of Engineering Theses & Dissertations

In nuclear science experiments it is usually necessary to determine the type of radiation, its energy and direction with considerable accuracy. The detection of neutrons and discriminating them from gamma rays is particularly difficult. A popular method of doing so is to measure characteristics intrinsic to the pulse shape of each radiation type in order to perform pulse-shape discrimination (PSD).

Historically, PSD capable systems have been designed with two approaches in mind: specialized analog circuitry, or digital signal processing (DSP). In this work we propose a PSD capable circuit topology using techniques from both the analog and DSP domains. We …


Method Of Making Hinged Self-Referencing Fabry–Pérot Cavity Sensors, Jeremiah C. Williams, Hengky Chandrahalim Mar 2022

Method Of Making Hinged Self-Referencing Fabry–Pérot Cavity Sensors, Jeremiah C. Williams, Hengky Chandrahalim

AFIT Patents

A method is provided for fabricating a passive optical sensor on a tip of an optical fiber. The method includes perpendicularly cleaving a tip of an optical fiber and mounting the tip of the optical fiber in a specimen holder of a photosensitive polymer three-dimensional micromachining machine. The method includes forming a three-dimensional microscopic optical structure within the photosensitive polymer that comprises a two cavity Fabry-Perot Interferometer (FPI) having a hinged optical layer that is pivotally coupled to a suspended structure. The method includes removing an uncured portion of the photosensitive polymer using a solvent. The method includes depositing a …