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Articles 1 - 5 of 5
Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Treated Hfo2 Based Rram Devices With Ru, Tan, Tin As Top Electrode For In-Memory Computing Hardware, Yuvraj Dineshkumar Patel
Treated Hfo2 Based Rram Devices With Ru, Tan, Tin As Top Electrode For In-Memory Computing Hardware, Yuvraj Dineshkumar Patel
Theses
The scalability and power efficiency of the conventional CMOS technology is steadily coming to a halt due to increasing problems and challenges in fabrication technology. Many non-volatile memory devices have emerged recently to meet the scaling challenges. Memory devices such as RRAMs or ReRAM (Resistive Random-Access Memory) have proved to be a promising candidate for analog in memory computing applications related to inference and learning in artificial intelligence. A RRAM cell has a MIM (Metal insulator metal) structure that exhibits reversible resistive switching on application of positive or negative voltage. But detailed studies on the power consumption, repeatability and retention …
Performance Of Pld Grown Zno Thin Film As A Thin Film Transistor, Shahidul Asif
Performance Of Pld Grown Zno Thin Film As A Thin Film Transistor, Shahidul Asif
MSU Graduate Theses
The performance of ZnO thin film (grown in different parameters) as a thin film transistor (TFT) is the focus of this study. ZnO is renowned for being n-type semiconductor naturally which was utilized in fabricating a thin film transistor here. This thesis is compared the performance of ZnO thin film transistor by growing the thin film using pulsed laser deposition (PLD) on two slightly different substrates at different temperatures in an optimal 0.1 milli bar oxygen pressure which was later analyzed using other material characterization methods. The substrates were both Si (100) but had different resistivity due to different amount …
Design Of Submicron Structured Guided-Mode-Resonance Near-Infrared Polarizer, Marzia Zaman
Design Of Submicron Structured Guided-Mode-Resonance Near-Infrared Polarizer, Marzia Zaman
Graduate Theses and Dissertations
The objective of this research is to design a larger submicron linear polarizer in the near-infrared wavelength range with a wide bandwidth which can be fabricated using the conventional thin-film microfabrication technology to reduce cost. For this purpose, a gold (Au) wire-grid transmission-type transverse-magnetic (TM) polarizer and a silicon (Si) wire-grid reflection-type TM polarizer, were designed using the guided-mode-resonance filter. The Au wire-grid TM polarizer of 700nm grating width and 1200nm grating period has 95% transmittance at 2400nm, more than 1000nm resonance peak bandwidth, and an extinction ratio (ER) of around 300 with a moderated level of sidebands. The 700nm …
Electric Field Control Of Fixed Magnetic Skyrmions For Energy Efficient Nanomagnetic Memory, Dhritiman Bhattacharya
Electric Field Control Of Fixed Magnetic Skyrmions For Energy Efficient Nanomagnetic Memory, Dhritiman Bhattacharya
Theses and Dissertations
To meet the ever-growing demand of faster and smaller computers, increasing number of transistors are needed in the same chip area. Unfortunately, Silicon based transistors have almost reached their miniaturization limits mainly due to excessive heat generation. Nanomagnetic devices are one of the most promising alternatives of CMOS. In nanomagnetic devices, electron spin, instead of charge, is the information carrier. Hence, these devices are non-volatile: information can be stored in these devices without needing any external power which could enable computing architectures beyond traditional von-Neumann computing. Additionally, these devices are also expected to be more energy efficient than CMOS devices …
Synthesis Of Graphene Using Plasma Etching And Atmospheric Pressure Annealing: Process And Sensor Development, Andrew Robert Graves
Synthesis Of Graphene Using Plasma Etching And Atmospheric Pressure Annealing: Process And Sensor Development, Andrew Robert Graves
Graduate Theses, Dissertations, and Problem Reports
Having been theorized in 1947, it was not until 2004 that graphene was first isolated. In the years since its isolation, graphene has been the subject of intense, world-wide study due to its incredibly diverse array of useful properties. Even though many billions of dollars have been spent on its development, graphene has yet to break out of the laboratory and penetrate mainstream industrial applications markets. This is because graphene faces a ‘grand challenge.’ Simply put, there is currently no method of manufacturing high-quality graphene on the industrial scale. This grand challenge looms particularly large for electronic applications where the …