Open Access. Powered by Scholars. Published by Universities.®
Electronic Devices and Semiconductor Manufacturing Commons™
Open Access. Powered by Scholars. Published by Universities.®
Articles 1 - 2 of 2
Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Efficient Modeling Techniques For Time-Dependent Quantum System With Applications To Carbon Nanotubes, Zuojing Chen
Efficient Modeling Techniques For Time-Dependent Quantum System With Applications To Carbon Nanotubes, Zuojing Chen
Masters Theses 1911 - February 2014
The famous Moore's law states: Since the invention of the integrated circuit, the number of transistors that can be placed on an integrated circuit has increased exponentially, doubling approximately every two years. As a result of the downscaling of the size of the transistor, quantum effects have become increasingly important while affecting significantly the device performances. Nowadays, at the nanometer scale, inter-atomic interactions and quantum mechanical properties need to be studied extensively. Device and material simulations are important to achieve these goals because they are flexible and less expensive than experiments. They are also important for designing and characterizing new …
Excitation-Induced Germanium Quantum Dot Formation On Si (100)-(2×1), Ali Oguz Er, Hani E. Elsayed-Ali
Excitation-Induced Germanium Quantum Dot Formation On Si (100)-(2×1), Ali Oguz Er, Hani E. Elsayed-Ali
Physics Faculty Publications
The effect of nanosecond pulsed laser excitation on the self-assembly of Ge quantum dots grown by pulsed laser deposition on Si (100)-(2×1) was studied. In situ reflection high-energy electron diffraction and ex situ atomic force microscopy were used to probe the quantum dot structure and morphology. At room temperature, applying the excitation laser decreased the surface roughness of the grown Ge film. With surface electronic excitation, crystalline Ge quantum dots were formed at 250 °C, a temperature too low for their formation without excitation. At a substrate temperature of 390 °C, electronic excitation during growth was found to improve the …