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Electronic Devices and Semiconductor Manufacturing Commons™
Open Access. Powered by Scholars. Published by Universities.®
- Keyword
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- Electrical Engineering (3)
- Etching (2)
- Semiconductor surfaces (2)
- Surface oxidation (2)
- Surface photoemission (2)
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- Surface treatments (2)
- 3.5 GHz voltage variable attenuators with high dynamic range and linearity (1)
- Attenuator (1)
- Crystal defects (1)
- Electric measurements (1)
- Epitaxy (1)
- Limiter (1)
- Low distortion ADC input protection (1)
- PIN diode. (1)
- Photons (1)
- Reduce second harmonic in PIN diode limiter (1)
- X-ray detectors (1)
- Publication
Articles 1 - 5 of 5
Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
X-Ray Photoemission Analysis Of Chemically Treated Gate Semiconductor Surfaces For Radiation Detector Applications, A. J. Nelson, A. M. Conway, B. W. Sturm, E. M. Behymer, C. E. Reinhardt, R. J. Nikolic, S. A. Payne, G. Pabst, K. C. Mandal
X-Ray Photoemission Analysis Of Chemically Treated Gate Semiconductor Surfaces For Radiation Detector Applications, A. J. Nelson, A. M. Conway, B. W. Sturm, E. M. Behymer, C. E. Reinhardt, R. J. Nikolic, S. A. Payne, G. Pabst, K. C. Mandal
Krishna C. Mandal
No abstract provided.
Highly Sensitive X-Ray Detectors In The Low-Energy Range On N-Type 4h-Sic Epitaxial Layers, K. C. Mandal, P. G. Muzykov, J. R. Terry
Highly Sensitive X-Ray Detectors In The Low-Energy Range On N-Type 4h-Sic Epitaxial Layers, K. C. Mandal, P. G. Muzykov, J. R. Terry
Krishna C. Mandal
No abstract provided.
X-Ray Photoemission Analysis Of Chemically Treated Gate Semiconductor Surfaces For Radiation Detector Applications, A. J. Nelson, A. M. Conway, B. W. Sturm, E. M. Behymer, C. E. Reinhardt, R. J. Nikolic, S. A. Payne, G. Pabst, K. C. Mandal
X-Ray Photoemission Analysis Of Chemically Treated Gate Semiconductor Surfaces For Radiation Detector Applications, A. J. Nelson, A. M. Conway, B. W. Sturm, E. M. Behymer, C. E. Reinhardt, R. J. Nikolic, S. A. Payne, G. Pabst, K. C. Mandal
Krishna C. Mandal
No abstract provided.
Variable Attenuator Blends Dynamic Range, Linearity, Chin-Leong Lim
Variable Attenuator Blends Dynamic Range, Linearity, Chin-Leong Lim
Chin-Leong Lim
A voltage variable attenuators (VVA) with compact dimensions and high linearity can be realized by connecting PIN diodes in the form of a π network. However this VVA's maximum frequency is limited to ~1 GHz because of signal leakage through the series diodes' parasitic capacitances. The ceiling frequency can significantly raised by resonating the parasitic capacitance with a parallel inductor. This technique has been previously demonstrated on a discrete design. To reduce component count and size, this work extends the technique to a standalone, highly-integrated module. This paper reports the performances achieved at 3.5 GHz.
The prototype's attenuation is adjustable …
Limiters Protect Adcs Without Adding Harmonics, Chin-Leong Lim
Limiters Protect Adcs Without Adding Harmonics, Chin-Leong Lim
Chin-Leong Lim
High-speed Analogue to Digital Converters (ADC) are used for sampling at either the intermediate frequency (IF) or the radio frequency of wireless receivers. When the transmitter is nearby, the sampled signal can exceed the ADC’s maximum input level. So, amplitude limiting is necessary to prevent ADC damage or degradation. While automatic gain control is effective for controlling IF amplitude excursion in traditional single-carrier systems, it is not desirable in modern multi-carrier applications. One solution is to cap the IF amplitude excursion with a limiter. Unfortunately, a new problem is created – the strong non-linearity that is required of a good …