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Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Electromagnon Excitation In Cupric Oxide Measured By Fabry-Pérot Enhanced Terahertz Mueller Matrix Ellipsometry, Sean Knight, Dharmalingam Prabhakaran, Christian Binek, Mathias Schubert
Electromagnon Excitation In Cupric Oxide Measured By Fabry-Pérot Enhanced Terahertz Mueller Matrix Ellipsometry, Sean Knight, Dharmalingam Prabhakaran, Christian Binek, Mathias Schubert
Christian Binek Publications
Here we present the use of Fabry-Pérot enhanced terahertz (THz) Mueller matrix ellipsometry to measure an electromagnon excitation in monoclinic cupric oxide (CuO). As a magnetically induced ferroelectric multiferroic, CuO exhibits coupling between electric and magnetic order. This gives rise to special quasiparticle excitations at THz frequencies called electromagnons. In order to measure the electromagnons in CuO, we exploit single-crystal CuO as a THz Fabry-Pérot cavity to resonantly enhance the excitation’s signature. This enhancement technique enables the complex index of refraction to be extracted. We observe a peak in the absorption coefficient near 0.705 THz and 215 K, which corresponds …
Limitations Of Zt As A Figure Of Merit For Nanostructured Thermoelectric Materials, Xufeng Wang, Mark Lundstrom
Limitations Of Zt As A Figure Of Merit For Nanostructured Thermoelectric Materials, Xufeng Wang, Mark Lundstrom
Department of Electrical and Computer Engineering Faculty Publications
Thermoelectric properties of nanocomposites are numerically studied as a function of average grain size or nanoparticle density by simulating the measurements as they would be done experimentally. In accordance with previous theoretical and experimental results, we find that the Seebeck coefficient, power factor and figure of merit, zT, can be increased by nanostructuring when energy barriers exist around the grain boundaries or embedded nanoparticles. When we simulate the performance of a thermoelectric cooler with the same material, however, we find that the maximum temperature difference is much less than expected from the given zT. This occurs because the …
Straintronic Nanomagnetic Devices For Non-Boolean Computing, Md Ahsanul Abeed
Straintronic Nanomagnetic Devices For Non-Boolean Computing, Md Ahsanul Abeed
Theses and Dissertations
Nanomagnetic devices have been projected as an alternative to transistor-based switching devices due to their non-volatility and potentially superior energy-efficiency. The energy efficiency is enhanced by the use of straintronics which involves the application of a voltage to a piezoelectric layer to generate a strain which is ultimately transferred to an elastically coupled magnetostrictive nanomaget, causing magnetization rotation. The low energy dissipation and non-volatility characteristics make straintronic nanomagnets very attractive for both Boolean and non-Boolean computing applications. There was relatively little research on straintronic switching in devices built with real nanomagnets that invariably have defects and imperfections, or their adaptation …