Open Access. Powered by Scholars. Published by Universities.®
Electronic Devices and Semiconductor Manufacturing Commons™
Open Access. Powered by Scholars. Published by Universities.®
- Keyword
Articles 1 - 3 of 3
Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Photoluminescence Of Beryllium-Related Defects In Gallium Nitride, Mykhailo Vorobiov, Mykhailo Vorobiov
Photoluminescence Of Beryllium-Related Defects In Gallium Nitride, Mykhailo Vorobiov, Mykhailo Vorobiov
Theses and Dissertations
This study explores the potential of beryllium (Be) as an alternative dopant to magnesium (Mg) for achieving higher hole concentrations in gallium nitride (GaN). Despite Mg prominence as an acceptor in optoelectronic and high-power devices, its deep acceptor level at 0.22 eV above the valence band limits its effectiveness. By examining Be, this research aims to pave the way to overcoming these limitations and extend the findings to aluminum nitride and aluminum gallium nitride (AlGaN) alloy. Key contributions of this work include. i)Identification of three Be-related luminescence bands in GaN through photoluminescence spectroscopy, improving the understanding needed for further material …
Electric Field Control Of Fixed Magnetic Skyrmions For Energy Efficient Nanomagnetic Memory, Dhritiman Bhattacharya
Electric Field Control Of Fixed Magnetic Skyrmions For Energy Efficient Nanomagnetic Memory, Dhritiman Bhattacharya
Theses and Dissertations
To meet the ever-growing demand of faster and smaller computers, increasing number of transistors are needed in the same chip area. Unfortunately, Silicon based transistors have almost reached their miniaturization limits mainly due to excessive heat generation. Nanomagnetic devices are one of the most promising alternatives of CMOS. In nanomagnetic devices, electron spin, instead of charge, is the information carrier. Hence, these devices are non-volatile: information can be stored in these devices without needing any external power which could enable computing architectures beyond traditional von-Neumann computing. Additionally, these devices are also expected to be more energy efficient than CMOS devices …
Straintronic Nanomagnetic Devices For Non-Boolean Computing, Md Ahsanul Abeed
Straintronic Nanomagnetic Devices For Non-Boolean Computing, Md Ahsanul Abeed
Theses and Dissertations
Nanomagnetic devices have been projected as an alternative to transistor-based switching devices due to their non-volatility and potentially superior energy-efficiency. The energy efficiency is enhanced by the use of straintronics which involves the application of a voltage to a piezoelectric layer to generate a strain which is ultimately transferred to an elastically coupled magnetostrictive nanomaget, causing magnetization rotation. The low energy dissipation and non-volatility characteristics make straintronic nanomagnets very attractive for both Boolean and non-Boolean computing applications. There was relatively little research on straintronic switching in devices built with real nanomagnets that invariably have defects and imperfections, or their adaptation …