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Full-Text Articles in Electromagnetics and Photonics
Selective Area Deposited Blue Gan-Ingan Multiple-Quantum Well Light Emitting Diodes Over Silicon Substrates, J. W. Yang, A. Lunev, Grigory Simin, A. Chitnis, M. Shatalov, M. Asif Khan, Joseph E. Van Nostrand, R. Gaska
Selective Area Deposited Blue Gan-Ingan Multiple-Quantum Well Light Emitting Diodes Over Silicon Substrates, J. W. Yang, A. Lunev, Grigory Simin, A. Chitnis, M. Shatalov, M. Asif Khan, Joseph E. Van Nostrand, R. Gaska
Grigory Simin
We report on fabrication and characterization of blue GaN–InGaN multi-quantum well (MQW)light-emitting diodes(LEDs) over (111) silicon substrates. Device epilayers were fabricated using unique combination of molecular beam epitaxy and low-pressure metalorganic chemical vapor depositiongrowth procedure in selective areas defined by openings in a SiO2mask over the substrates. This selective area deposition procedure in principle can produce multicolor devices using a very simple fabrication procedure. The LEDs had a peak emission wavelength of 465 nm with a full width at half maximum of 40 nm. We also present the spectral emission data with the diodes operating up to 250 …
Time-Resolved Electroluminescence Of Algan-Based Light-Emitting Diodes With Emission At 285 Nm, M. Shatalov, A. Chitnis, V. Mandavilli, R. Pachipulusu, J. P. Zhang, V. Adivarahan, S. Wu, Grigory Simin, M. Asif Khan, G. Tamulaitis, A. Sereika, I. Yilmaz, M. S. Shur, R. Gaska
Time-Resolved Electroluminescence Of Algan-Based Light-Emitting Diodes With Emission At 285 Nm, M. Shatalov, A. Chitnis, V. Mandavilli, R. Pachipulusu, J. P. Zhang, V. Adivarahan, S. Wu, Grigory Simin, M. Asif Khan, G. Tamulaitis, A. Sereika, I. Yilmaz, M. S. Shur, R. Gaska
Grigory Simin
We present a study on the time evolution of the electroluminescence(EL)spectra of AlGaN-based deep ultraviolet light-emitting diodes(LEDs) under pulsed current pumping. The ELspectra peaks at 285 nm and 330 nm are found to result from recombination involving band-to-band and free carriers to deep acceptor level transitions. The 330 nm long-wavelength transitions to deep acceptor levels in the p-AlGaN layer as well as the nonradiative processes significantly influence the LED internal quantum efficiency.