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Series

2000

Articles 1 - 10 of 10

Full-Text Articles in Electromagnetics and Photonics

High-Quality P-N Junctions With Quaternary Alingan/Ingan Quantum Wells, A. Chitnis, A. Kumar, M. Shatalov, V. Adivarahan, A. Lunev, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. Shur Dec 2000

High-Quality P-N Junctions With Quaternary Alingan/Ingan Quantum Wells, A. Chitnis, A. Kumar, M. Shatalov, V. Adivarahan, A. Lunev, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. Shur

Faculty Publications

We report on quaternary AlInGaN/InGaN multiple quantum well(MQW)light emitting diode structures grown on sapphire substrates. The structures demonstrate high quality of the p–njunctions with quaternary MQW. At low forward bias (below 2 V), the temperature dependent of current–voltage characteristics are exponential with the ideality factor of 2.28, which is in a good agreement with the model of the injected carrier recombination in the space charge region. This ideality factor value is approximately three times lower than for conventional GaN/InGaN light emitting diodes(LEDs). The obtained data indicate the recombination in p–njunction space charge region to be responsible for a current transport …

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Enhanced Luminescence In Ingan Multiple Quantum Wells With Quaternary Alingan Barriers, Jianping Zhang, J. Yang, Grigory Simin, M. Shatalov, M. Asif Khan, M. S. Shur, R. Gaska Oct 2000

Enhanced Luminescence In Ingan Multiple Quantum Wells With Quaternary Alingan Barriers, Jianping Zhang, J. Yang, Grigory Simin, M. Shatalov, M. Asif Khan, M. S. Shur, R. Gaska

Faculty Publications

We report on the comparative photoluminescence studies of AlGaN/GaN, GaN/InGaN, and AlInGaN/InGaN multiple quantum well(MQW) structures. The study clearly shows the improvement in materials quality with the introduction of indium. Our results point out the localized state emission mechanism for GaN/InGaN structures and the quantum well emission mechanism for AlInGaN/InGaN structures. The introduction of indium is the dominant factor responsible for the observed differences in the photoluminescence spectra of these MQW structures.

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Optical Bandgap Formation In Alingan Alloys, G. Tamulaitis, K. Kazlauskas, S. Juršėnas, A. Žukauskas, M. A. Khan, J. W. Yang, J. Zhang, Grigory Simin, M. S. Shur, R. Gaska Oct 2000

Optical Bandgap Formation In Alingan Alloys, G. Tamulaitis, K. Kazlauskas, S. Juršėnas, A. Žukauskas, M. A. Khan, J. W. Yang, J. Zhang, Grigory Simin, M. S. Shur, R. Gaska

Faculty Publications

We report on the spectral dynamics of the reflectivity, site-selectively excited photoluminescence,photoluminescence excitation, and time-resolved luminescence in quaternary AlInGaN epitaxial layers grown on GaN templates. The incorporation of a few percents of In into AlGaN causes significant smoothening of the band-bottom potential profile in AlInGaN layers owing to improved crystal quality. An abrupt optical bandgap indicates that a nearly lattice-matched AlInGaN/GaN heterostructure with large energy band offsets can be grown for high-efficiency light-emitting devices.

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Sio2-Passivated Lateral-Geometry Gan Transparent Schottky-Barrier Detectors, V. Adivarahan, Grigory Simin, J. W. Yang, A. Lunev, M. Asif Khan, M. Pala, M. Shur, R. Gaska Aug 2000

Sio2-Passivated Lateral-Geometry Gan Transparent Schottky-Barrier Detectors, V. Adivarahan, Grigory Simin, J. W. Yang, A. Lunev, M. Asif Khan, M. Pala, M. Shur, R. Gaska

Faculty Publications

We report on a transparent Schottky-barrierultraviolet detector on GaN layers over sapphire substrates. Using SiO2 surface passivation, reverse leakage currents were reduced to a value as low as 1 pA at 5 V reverse bias for 200 μm diameter device. The device exhibits a high internal gain, about 50, at low forward biases. The response time (about 15 ns) is RC limited, even in the internal gain regime. A record low level of the noise spectral density, 5×10−23 A2/Hz, was measured at 10 Hz. We attribute this low noise level to the reduced reverse leakage current.

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Rotation-Invariant Synthetic Discriminant Function Filter For Pattern Recognition, Vahid R. Riasati, Partha P. Banerjee, Mustafa A. G. Abushagur, Kenneth B. Howell May 2000

Rotation-Invariant Synthetic Discriminant Function Filter For Pattern Recognition, Vahid R. Riasati, Partha P. Banerjee, Mustafa A. G. Abushagur, Kenneth B. Howell

Electrical and Computer Engineering Faculty Publications

The ring synthetic discriminant function (RSDF) filter for rotation-invariant response is discussed for pattern recognition. This method uses one half of a slice of the Fourier transform of the object to generate the transfer function of the filter. This is accomplished by rotating the one half of a slice in the Fourier domain through 2π rad about the zero-frequency point of the Fourier plane. This filter has the advantage of always matching at least one half of a slice of the Fourier transform of any rotation of the image. An analytical discussion of the filter construction and correlation results are …

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Lattice And Energy Band Engineering In Alingan/Ga Heterostructures, M. Asif Khan, J. W. Yang, Grigory Simin, R. Gaska, M. S. Shur, Hans-Conrad Zur Loye, G. Tamulaitis, A. Zukauskas, David J. Smith, D. Chandrasekhar, R. Bicknell-Tassius Feb 2000

Lattice And Energy Band Engineering In Alingan/Ga Heterostructures, M. Asif Khan, J. W. Yang, Grigory Simin, R. Gaska, M. S. Shur, Hans-Conrad Zur Loye, G. Tamulaitis, A. Zukauskas, David J. Smith, D. Chandrasekhar, R. Bicknell-Tassius

Faculty Publications

We report on structural, optical, and electrical properties of AlxInyGa1−x−yNGaNheterostructures grown on sapphire and 6H–SiC substrates. Our results demonstrate that incorporation of In reduces the lattice mismatch, Δa, between AlInGaN and GaN, and that an In to Al ratio of close to 1:5 results in nearly strain-free heterostructures. The observed reduction in band gap,ΔEg, determined from photoluminescence measurements, is more than 1.5 times higher than estimated from the linear dependencies of Δa and ΔEg on the In molar fraction. The incorporation of In and resulting changes in the built-in strain in …

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Selective Area Deposited Blue Gan-Ingan Multiple-Quantum Well Light Emitting Diodes Over Silicon Substrates, J. W. Yang, A. Lunev, Grigory Simin, A. Chitnis, M. Shatalov, M. Asif Khan, Joseph E. Van Nostrand, R. Gaska Jan 2000

Selective Area Deposited Blue Gan-Ingan Multiple-Quantum Well Light Emitting Diodes Over Silicon Substrates, J. W. Yang, A. Lunev, Grigory Simin, A. Chitnis, M. Shatalov, M. Asif Khan, Joseph E. Van Nostrand, R. Gaska

Faculty Publications

We report on fabrication and characterization of blue GaN–InGaN multi-quantum well (MQW)light-emitting diodes(LEDs) over (111) silicon substrates. Device epilayers were fabricated using unique combination of molecular beam epitaxy and low-pressure metalorganic chemical vapor depositiongrowth procedure in selective areas defined by openings in a SiO2mask over the substrates. This selective area deposition procedure in principle can produce multicolor devices using a very simple fabrication procedure. The LEDs had a peak emission wavelength of 465 nm with a full width at half maximum of 40 nm. We also present the spectral emission data with the diodes operating up to 250 …

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Nonlinear Self-Organization In Photorefractive Materials, Partha P. Banerjee, Nickolai Kukhtarev, John O. Dimmock Jan 2000

Nonlinear Self-Organization In Photorefractive Materials, Partha P. Banerjee, Nickolai Kukhtarev, John O. Dimmock

Electrical and Computer Engineering Faculty Publications

This chapter discusses self-organization and its effects in optics. One of the most exciting and potentially useful areas of current research in optics involves the understanding and exploitation of self-organization in nonlinear optical systems. This self-organization may sometimes lead to the evolution of complex spatial patterns that can be regarded as the nonlinear eigenmodes of the system. Generation of these patterns is characteristically marked by the presence of intensity thresholds. In a nonlinear system with complicated temporal dynamics, it turns out that one cannot retain purity in spatial dimensionality. It is therefore equally important to investigate the dynamics of the …

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New Free-Space Multistage Optical Interconnection Network And Its Matrix Theory, Fengguang Luo, Mingcui Cao, Anjun Wan, Jun Xu, Xinjun Zhou, Cong Deng Jan 2000

New Free-Space Multistage Optical Interconnection Network And Its Matrix Theory, Fengguang Luo, Mingcui Cao, Anjun Wan, Jun Xu, Xinjun Zhou, Cong Deng

Electro-Optics and Photonics Faculty Publications

A new free-space multistage optical interconnection network which is called the Comega interconnection network is presented. It has the same topological construction for the cascade stages of the Comega interconnection. The concept of the left Comega and the right Comega interconnection networks are given to describe the whole Comega interconnection network. The matrix theory for the Comega interconnection network is presented. The route controlling of the Comega interconnection network is decided based on the matrix analysis. The node switching states in cascade stages of the 8 by 8 Comega interconnection network for the route selection are given. The data communications …

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Characterization Of Poly-Si Thin Films Deposited By Magnetron Sputtering Onto Ni Prelayers, Elena A. Guliants, Wayne A. Anderson Jan 2000

Characterization Of Poly-Si Thin Films Deposited By Magnetron Sputtering Onto Ni Prelayers, Elena A. Guliants, Wayne A. Anderson

Electrical and Computer Engineering Faculty Publications

A method of producing a polycrystalline silicon thin film on a foreign substrate without subsequent annealing has been developed. Thermally evaporated 5–100 nm thick Nifilms served as prelayers for magnetron sputtered Si thin films. A continuous film was obtained as a result of metal induced growth of polysilicon during low temperature (below 600 °C) deposition. The film uniformity is promising for large area device applications. The influence of the Ni prelayer thickness on the grain size of thus obtained films was investigated. Atomic force microscopy and cross-sectional scanning electron microscopy studies revealed features in the 150–600 nm size range while …

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