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- Coercive fields (1)
- Co₂MnAl (1)
- Ferric ions (1)
- GaAs-based multiferroic heterostrucuture transducers (1)
- Huesler alloy (1)
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- Hysteresis (1)
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- ME (1)
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- ZnO (1)
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Articles 1 - 3 of 3
Full-Text Articles in Electromagnetics and Photonics
Large Coercivity In Nanostructured Rare-Earth-Free Mnₓga Films, Don Heiman, Tom Nummy, Steve Bennett, Tom Cardinal
Large Coercivity In Nanostructured Rare-Earth-Free Mnₓga Films, Don Heiman, Tom Nummy, Steve Bennett, Tom Cardinal
Donald Heiman
The magnetic hysteresis of MnₓGa films exhibit remarkably large coercive fields as high as μₒHC=2.5 T when fabricated with nanoscale particles of a suitable size and orientation. This coercivity is an order of magnitude larger than in well-ordered epitaxial film counterparts and bulk materials. The enhanced coercivity is attributed to the combination of large magnetocrystalline anisotropy and ~50-100 nm size nanoparticles. The large coercivity is also replicated in the electrical properties through the anomalous Hall effect. The magnitude of the coercivity approaches that found in rare-earth magnets, making them attractive for rare-earth-free magnet applications.
Room Temperature Magnetism In Semiconducting Films Of Zno Doped With Ferric Ions, S. Yoon, Y. Chen, D. Heiman, A. Yang, N. Sun, C. Vittoria, V. Harris
Room Temperature Magnetism In Semiconducting Films Of Zno Doped With Ferric Ions, S. Yoon, Y. Chen, D. Heiman, A. Yang, N. Sun, C. Vittoria, V. Harris
Donald Heiman
Films consisting of Zn₁₋ₓFeₓO were prepared by alternating-target laser ablation deposition. The Fe doping levels ranged from x=0.016 to 0.125 at. %. X-ray diffraction and energy dispersive x-ray spectroscopy measurements showed only (002n) reflections of the ZnO host and confirmation of the Fe concentration, respectively. For films grown on (001) Al₂O₃ at 300 K, room temperature average saturation magnetization, < 4πMs >, measured from superconducting quantum interference device (SQUID) hysteresis loops for x=0.125 ± 0.025 was 172 G. Although SQUID measurements were sensitive to the average value of the saturation magnetization, ferrimagnetic resonance measurements appeared to be sensitive only to the saturation …
Microwave Tunability In A Gaas-Based Multiferroic Heterostructure: Co₂Mnal/Gaas/Pmn-Pt, Y. Chen, J. Gao, M. Liu, S. D. Yoon, A. L. Geiler, M. Nedoroscik, D. Heiman, N. X. Sun, C. Vittoria, V. G. Harris
Microwave Tunability In A Gaas-Based Multiferroic Heterostructure: Co₂Mnal/Gaas/Pmn-Pt, Y. Chen, J. Gao, M. Liu, S. D. Yoon, A. L. Geiler, M. Nedoroscik, D. Heiman, N. X. Sun, C. Vittoria, V. G. Harris
Donald Heiman
A strong magnetoelectric (ME) interaction is presented in a magnetostrictive-semiconductor-piezoelectric heterostructure that consists of the Huesler alloy, Co₂MnAl, GaAs, and lead magnesium niobate-lead titanate (PMN-PT). The laminated Co₂MnAl/GaAs/PMN-PT structure, having a thickness of 19 nm/180 μm/500 μm, demonstrates a ferromagnetic resonance (FMR) field shift of 28 Oe with an external electric field of 200 V across the PMN-PT substrate. This corresponds to a resonance frequency shift of similar to 125 MHz at X-band. It yields a large ME coupling (7 Oe cm/kV) and microwave tunability (similar to 32 MHz/kV cm⁻¹), compared to other trilayer multiferroic composite structures. In addition, static …