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Full-Text Articles in Electromagnetics and Photonics
Structure, Magnetic, And Microwave Properties Of Thick Ba-Hexaferrite Films Epitaxially Grown On Gan/Al₂O₃ Substrates, Z. Chen, A. Yang, K. Mahalingam, K. L. Averett, J. Gao, G. J. Brown, C. Vittoria, V. G. Harris
Structure, Magnetic, And Microwave Properties Of Thick Ba-Hexaferrite Films Epitaxially Grown On Gan/Al₂O₃ Substrates, Z. Chen, A. Yang, K. Mahalingam, K. L. Averett, J. Gao, G. J. Brown, C. Vittoria, V. G. Harris
Carmine Vittoria
Thick barium hexaferrite [BaO∙(Fe₂O₃)₆] films, having the magnetoplumbite structure (i.e., Ba M), were epitaxially grown on c-axis oriented GaN/Al₂O₃ substrates by pulsed laser deposition followed by liquid phase epitaxy. X-ray diffraction showed (0,0,2n) crystallographic alignment with pole figure analyses confirming epitaxial growth. High resolution transmission electron microscopy images revealed magnetoplumbite unit cells stacked with limited interfacial mixing. Saturation magnetization, 4πMs, was measured for as-grown films to be 4.1 ± 0.3 kG with a perpendicular magnetic anisotropy field of 16 ± 0.3 kOe. Ferromagnetic resonance linewidth, the peak-to-peak power absorption derivative at 53 GHz, was 86 Oe. These properties will prove …
Growth And Characterization Of Thick Oriented Barium Hexaferrite Films On Mgo (111) Substrates, S. A. Oliver, S. D. Yoon, I Kozulin, M. L. Chen, C. Vittoria
Growth And Characterization Of Thick Oriented Barium Hexaferrite Films On Mgo (111) Substrates, S. A. Oliver, S. D. Yoon, I Kozulin, M. L. Chen, C. Vittoria
Carmine Vittoria
Highly oriented films of BaFe₁₂O₁₉ have been deposited onto MgO (111) substrates by pulsed laser ablation deposition. In contrast to epitaxial BaFe₁₂O₁₉ films grown on Al₂O₃ (001) substrates, these films experience an in-plane biaxial compressive stress, and do not crack or delaminate to thicknesses of at least 28 μm. X-ray diffraction, magnetometry, torque magnetometry, and ferrimagnetic resonance results all indicate excellent c-axis orientation normal to the film plane, and magnetic properties comparable to bulk values. The thickness and properties of these films approach those required for applications in low-loss self-biased nonreciprocal microwave devices
Microwave And Magnetic Properties Of Barium Hexaferrite Films Having The C-Axis In The Film Plane By Liquid Phase Epitaxy Technique, S. D. Yoon, C. Vittoria
Microwave And Magnetic Properties Of Barium Hexaferrite Films Having The C-Axis In The Film Plane By Liquid Phase Epitaxy Technique, S. D. Yoon, C. Vittoria
Carmine Vittoria
We report the growth of thick barium hexaferrite (BaFe₁₂O₁₉,BaM) films on m-planes ([1100] or [1010]) sapphire (Al₂O₃) substrates by the liquid phase epitaxy deposition technique. The procedure entailed the deposition of seed layers of BaFe₁₂O₁₉ onto the substrate by the pulsed laser ablation deposition and then dipping the substrate into a molten flux for 2 h. The total thickness ranged from 60 μm to 200 μm. The vibrating sample magnetometer (VSM) measurement data showed that the film exhibited magnetic uniaxial anisotropy axis in the film plane. The coercive field was relatively small, range of Hc was from 0.007 kOe to …