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Full-Text Articles in Electromagnetics and Photonics
Microwave Tunability In A Gaas-Based Multiferroic Heterostructure: Co₂Mnal/Gaas/Pmn-Pt, Y. Chen, J. Gao, M. Liu, S. D. Yoon, A. L. Geiler, M. Nedoroscik, D. Heiman, N. X. Sun, C. Vittoria, V. G. Harris
Microwave Tunability In A Gaas-Based Multiferroic Heterostructure: Co₂Mnal/Gaas/Pmn-Pt, Y. Chen, J. Gao, M. Liu, S. D. Yoon, A. L. Geiler, M. Nedoroscik, D. Heiman, N. X. Sun, C. Vittoria, V. G. Harris
Nian X. Sun
A strong magnetoelectric (ME) interaction is presented in a magnetostrictive-semiconductor-piezoelectric heterostructure that consists of the Huesler alloy, Co₂MnAl, GaAs, and lead magnesium niobate-lead titanate (PMN-PT). The laminated Co₂MnAl/GaAs/PMN-PT structure, having a thickness of 19 nm/180 μm/500 μm, demonstrates a ferromagnetic resonance (FMR) field shift of 28 Oe with an external electric field of 200 V across the PMN-PT substrate. This corresponds to a resonance frequency shift of similar to 125 MHz at X-band. It yields a large ME coupling (7 Oe cm/kV) and microwave tunability (similar to 32 MHz/kV cm⁻¹), compared to other trilayer multiferroic composite structures. In addition, static …
Microwave Tunability In A Gaas-Based Multiferroic Heterostructure: Co₂Mnal/Gaas/Pmn-Pt, Y. Chen, J. Gao, M. Liu, S. D. Yoon, A. L. Geiler, M. Nedoroscik, D. Heiman, N. X. Sun, C. Vittoria, V. G. Harris
Microwave Tunability In A Gaas-Based Multiferroic Heterostructure: Co₂Mnal/Gaas/Pmn-Pt, Y. Chen, J. Gao, M. Liu, S. D. Yoon, A. L. Geiler, M. Nedoroscik, D. Heiman, N. X. Sun, C. Vittoria, V. G. Harris
Donald Heiman
A strong magnetoelectric (ME) interaction is presented in a magnetostrictive-semiconductor-piezoelectric heterostructure that consists of the Huesler alloy, Co₂MnAl, GaAs, and lead magnesium niobate-lead titanate (PMN-PT). The laminated Co₂MnAl/GaAs/PMN-PT structure, having a thickness of 19 nm/180 μm/500 μm, demonstrates a ferromagnetic resonance (FMR) field shift of 28 Oe with an external electric field of 200 V across the PMN-PT substrate. This corresponds to a resonance frequency shift of similar to 125 MHz at X-band. It yields a large ME coupling (7 Oe cm/kV) and microwave tunability (similar to 32 MHz/kV cm⁻¹), compared to other trilayer multiferroic composite structures. In addition, static …
Microwave Tunability In A Gaas-Based Multiferroic Heterostructure: Co₂Mnal/Gaas/Pmn-Pt, Y. Chen, J. Gao, M. Liu, S. D. Yoon, A. L. Geiler, M. Nedoroscik, D. Heiman, N. X. Sun, C. Vittoria, V. G. Harris
Microwave Tunability In A Gaas-Based Multiferroic Heterostructure: Co₂Mnal/Gaas/Pmn-Pt, Y. Chen, J. Gao, M. Liu, S. D. Yoon, A. L. Geiler, M. Nedoroscik, D. Heiman, N. X. Sun, C. Vittoria, V. G. Harris
Vincent G. Harris
A strong magnetoelectric (ME) interaction is presented in a magnetostrictive-semiconductor-piezoelectric heterostructure that consists of the Huesler alloy, Co₂MnAl, GaAs, and lead magnesium niobate-lead titanate (PMN-PT). The laminated Co₂MnAl/GaAs/PMN-PT structure, having a thickness of 19 nm/180 μm/500 μm, demonstrates a ferromagnetic resonance (FMR) field shift of 28 Oe with an external electric field of 200 V across the PMN-PT substrate. This corresponds to a resonance frequency shift of similar to 125 MHz at X-band. It yields a large ME coupling (7 Oe cm/kV) and microwave tunability (similar to 32 MHz/kV cm⁻¹), compared to other trilayer multiferroic composite structures. In addition, static …
Microwave Tunability In A Gaas-Based Multiferroic Heterostructure: Co₂Mnal/Gaas/Pmn-Pt, Y. Chen, J. Gao, M. Liu, S. D. Yoon, A. L. Geiler, M. Nedoroscik, D. Heiman, N. X. Sun, C. Vittoria, V. G. Harris
Microwave Tunability In A Gaas-Based Multiferroic Heterostructure: Co₂Mnal/Gaas/Pmn-Pt, Y. Chen, J. Gao, M. Liu, S. D. Yoon, A. L. Geiler, M. Nedoroscik, D. Heiman, N. X. Sun, C. Vittoria, V. G. Harris
Carmine Vittoria
A strong magnetoelectric (ME) interaction is presented in a magnetostrictive-semiconductor-piezoelectric heterostructure that consists of the Huesler alloy, Co₂MnAl, GaAs, and lead magnesium niobate-lead titanate (PMN-PT). The laminated Co₂MnAl/GaAs/PMN-PT structure, having a thickness of 19 nm/180 μm/500 μm, demonstrates a ferromagnetic resonance (FMR) field shift of 28 Oe with an external electric field of 200 V across the PMN-PT substrate. This corresponds to a resonance frequency shift of similar to 125 MHz at X-band. It yields a large ME coupling (7 Oe cm/kV) and microwave tunability (similar to 32 MHz/kV cm⁻¹), compared to other trilayer multiferroic composite structures. In addition, static …
Multiferroic Heterostructure Fringe Field Tuning Of Meander Line Microstrip Ferrite Phase Shifter, A. L. Geiler, S. M. Gillette, Y. Chen, J. Wang, Z. Chen, S. D. Yoon, P. He, J. Gao, C. Vittoria, V. G. Harris
Multiferroic Heterostructure Fringe Field Tuning Of Meander Line Microstrip Ferrite Phase Shifter, A. L. Geiler, S. M. Gillette, Y. Chen, J. Wang, Z. Chen, S. D. Yoon, P. He, J. Gao, C. Vittoria, V. G. Harris
Vincent G. Harris
Magnetic fringe fields emanating from a multiferroic heterostructure composite of Terfenol-D and lead magnesium niobate-lead titanate were utilized to actively tune a meander line microstrip ferrite phase shifter operating above ferrimagnetic resonance at C-band. Differential phase shifts of 65 degrees were measured when tuned with an applied voltage to the multiferroic heterostructure. This demonstration of magnetoelectric field generation provides an alternative approach to tuning broadband planar microwave magnetic devices where neither strain nor direct electromagnetic coupling is experienced between device and multiferroic transducer.
Multiferroic Heterostructure Fringe Field Tuning Of Meander Line Microstrip Ferrite Phase Shifter, A. L. Geiler, S. M. Gillette, Y. Chen, J. Wang, Z. Chen, S. D. Yoon, P. He, J. Gao, C. Vittoria, V. G. Harris
Multiferroic Heterostructure Fringe Field Tuning Of Meander Line Microstrip Ferrite Phase Shifter, A. L. Geiler, S. M. Gillette, Y. Chen, J. Wang, Z. Chen, S. D. Yoon, P. He, J. Gao, C. Vittoria, V. G. Harris
Carmine Vittoria
Magnetic fringe fields emanating from a multiferroic heterostructure composite of Terfenol-D and lead magnesium niobate-lead titanate were utilized to actively tune a meander line microstrip ferrite phase shifter operating above ferrimagnetic resonance at C-band. Differential phase shifts of 65 degrees were measured when tuned with an applied voltage to the multiferroic heterostructure. This demonstration of magnetoelectric field generation provides an alternative approach to tuning broadband planar microwave magnetic devices where neither strain nor direct electromagnetic coupling is experienced between device and multiferroic transducer.